JAN2N1711
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- Mfr.Part #
- JAN2N1711
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO5
- Stock
- 23,151
- In Stock ：
- 23,151
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Series :
- Military, MIL-PRF-19500/225
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 7V
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Radiation Hardening :
- No
- RoHS Status :
- Non-RoHS Compliant
- Configuration :
- Single
- Published :
- 2002
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 75V
- Number of Terminations :
- 3
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Through Hole
- Qualification Status :
- Qualified
- Mount :
- Through Hole
- Max Power Dissipation :
- 800mW
- Power Dissipation :
- 800mW
- Packaging :
- Bulk
- JESD-609 Code :
- e0
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Collector Current :
- 500mA
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Pin Count :
- 3
- Datasheets
- JAN2N1711
NPN -65°C~200°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N1711 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 15mA, 150mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
JAN2N1711 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N1711 Applications
There are a lot of Microsemi Corporation
JAN2N1711 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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