JAN2N1482
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- Mfr.Part #
- JAN2N1482
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 55V 1.5A TO5
- Stock
- 32,976
- In Stock ：
- 32,976
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- Power Dissipation :
- 1W
- Configuration :
- Single
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Number of Elements :
- 1
- Max Collector Current :
- 1.5A
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Series :
- Military, MIL-PRF-19500/207
- JESD-609 Code :
- e0
- Mount :
- Through Hole
- Packaging :
- Bulk
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 12V
- Terminal Form :
- Wire
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 35 @ 200mA 4V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 10mA, 200mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 55V
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- JAN2N1482
NPN -65°C~200°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N1482 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 35 @ 200mA 4V.When VCE saturation is 750mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.A maximum collector current of 1.5A volts can be achieved.
JAN2N1482 Features
the DC current gain for this device is 35 @ 200mA 4V
the vce saturation(Max) is 750mV @ 10mA, 200mA
the emitter base voltage is kept at 12V
JAN2N1482 Applications
There are a lot of Microsemi Corporation
JAN2N1482 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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