JAN2N2857

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Mount :

Through Hole

Max Collector Current :

40mA

Terminal Position :

BOTTOM

Polarity/Channel Type :

NPN

Mounting Type :

Through Hole

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

0.2W

Terminal Finish :

Tin/Lead (Sn/Pb)

Factory Lead Time :

23 Weeks

Number of Pins :

4

Transistor Element Material :

SILICON

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Collector-Base Capacitance-Max :

1pF

Frequency - Transition :

500MHz

ECCN Code :

EAR99

Power - Max :

200mW

Packaging :

Bulk

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA 1V

JESD-609 Code :

e0

Gain :

12.5dB ~ 21dB @ 450MHz

Number of Terminations :

4

Series :

Military, MIL-PRF-19500/343

Package / Case :

TO-72-3 Metal Can

Published :

2007

RoHS Status :

Non-RoHS Compliant

Configuration :

Single

Terminal Form :

Wire

Operating Temperature :

-65°C~200°C TJ

Qualification Status :

Qualified

Voltage - Collector Emitter Breakdown (Max) :

15V