IXTY1N80P
- Mfr.Part #
- IXTY1N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 1A TO252
- Stock
- 42,478
- In Stock :
- 42,478
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 24 Weeks
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Terminal Finish :
- Pure Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 2A
- Mounting Style :
- SMD/SMT
- Power Dissipation :
- 42W
- Power Dissipation (Max) :
- 42W (Tc)
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- yes
- Pin Count :
- 4
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Transistor Polarity :
- N-Channel
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 75 mJ
- Mounting Type :
- Surface Mount
- Base Product Number :
- IXTY1
- Number of Elements :
- 1
- Series :
- Polar™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Brand :
- IXYS
- RoHS :
- Details
- Power Dissipation-Max (Abs) :
- 42 W
- Package :
- Tube
- Drain Current-Max (Abs) (ID) :
- 1A
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 14 Ω @ 500mA, 10V
- Transistor Type :
- 1 N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 10V
- Packaging :
- Tube
- Manufacturer :
- IXYS
- ECCN Code :
- EAR99
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 1A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Product Category :
- MOSFET
- Published :
- 2009
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 42W Tc
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 14 Ω
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Supplier Device Package :
- TO-252, (D-Pak)
- FET Feature :
- --
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 800V
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-252
- DS Breakdown Voltage-Min :
- 800V
- Product Status :
- Active
- Number of Terminals :
- 2
- Datasheets
- IXTY1N80P

N-Channel Tube 14 Ω @ 500mA, 10V ±20V 250pF @ 25V 9nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1N80P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 2A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTY1N80P Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 1A
based on its rated peak drain current 2A.
a 800V drain to source voltage (Vdss)
IXTY1N80P Applications
There are a lot of IXYS
IXTY1N80P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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