IXTY1N80P

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Mfr.Part #
IXTY1N80P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 800V 1A TO252
Stock
42,478
In Stock :
42,478

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
24 Weeks
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Terminal Finish :
Pure Tin (Sn)
Pulsed Drain Current-Max (IDM) :
2A
Mounting Style :
SMD/SMT
Power Dissipation :
42W
Power Dissipation (Max) :
42W (Tc)
Polarity/Channel Type :
N-Channel
Surface Mount :
yes
Pin Count :
4
Vgs(th) (Max) @ Id :
4V @ 50μA
Transistor Polarity :
N-Channel
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
75 mJ
Mounting Type :
Surface Mount
Base Product Number :
IXTY1
Number of Elements :
1
Series :
Polar™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
1A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Brand :
IXYS
RoHS :
Details
Power Dissipation-Max (Abs) :
42 W
Package :
Tube
Drain Current-Max (Abs) (ID) :
1A
Pbfree Code :
yes
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs :
14 Ω @ 500mA, 10V
Transistor Type :
1 N-Channel
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 10V
Packaging :
Tube
Manufacturer :
IXYS
ECCN Code :
EAR99
Package Shape :
RECTANGULAR
Continuous Drain Current (ID) :
1A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Surface Mount
Product Category :
MOSFET
Published :
2009
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
2
FET Type :
N-Channel
Power Dissipation-Max :
42W Tc
JESD-30 Code :
R-PSSO-G2
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Drain-source On Resistance-Max :
14 Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Supplier Device Package :
TO-252, (D-Pak)
FET Feature :
--
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
800V
Additional Feature :
AVALANCHE RATED
JEDEC-95 Code :
TO-252
DS Breakdown Voltage-Min :
800V
Product Status :
Active
Number of Terminals :
2
Datasheets
IXTY1N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N80P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Number of Pins:3, Number of Channels:1 Channel, IXTY1N80P pinout, IXTY1N80P datasheet PDF, IXTY1N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY1N80P


N-Channel Tube 14 Ω @ 500mA, 10V ±20V 250pF @ 25V 9nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY1N80P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 2A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTY1N80P Features


the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 1A
based on its rated peak drain current 2A.
a 800V drain to source voltage (Vdss)


IXTY1N80P Applications


There are a lot of IXYS
IXTY1N80P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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