IXTY02N120P

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Mfr.Part #
IXTY02N120P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1200V 200MA TO252
Stock
35,935
In Stock :
35,935

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
SMD/SMT
JESD-609 Code :
e3
Published :
2004
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
DS Breakdown Voltage-Min :
1200 V
Case Connection :
DRAIN
FET Type :
N-Channel
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
1.2kV
Qualification Status :
Not Qualified
Power Dissipation-Max :
33W Tc
Drain to Source Voltage (Vdss) :
1200V
Terminal Position :
Single
Pbfree Code :
yes
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
4V @ 100µA
Reach Compliance Code :
not_compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Product Type :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation (Max) :
33W (Tc)
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Terminal Form :
Gull wing
Maximum Operating Temperature :
+ 150 C
Brand :
IXYS
Pulsed Drain Current-Max (IDM) :
0.6A
Supplier Device Package :
TO-252, (D-Pak)
Pin Count :
4
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
40 mJ
Transistor Type :
1 N-Channel
Rds On (Max) @ Id, Vgs :
75 Ω @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs :
4.7nC @ 10V
Number of Elements :
1
Polarity/Channel Type :
N-Channel
FET Feature :
-
Series :
Polar™
Product Status :
Active
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
24 Weeks
Minimum Operating Temperature :
- 55 C
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
JEDEC-95 Code :
TO-252
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
33W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Finish :
Matte Tin (Sn)
Continuous Drain Current (ID) :
200mA
Package Shape :
RECTANGULAR
Number of Channels :
1 Channel
JESD-30 Code :
R-PSSO-G2
Input Capacitance (Ciss) (Max) @ Vds :
104pF @ 25V
Product Category :
MOSFET
Configuration :
Single
Base Product Number :
IXTY02
Drain-source On Resistance-Max :
0.075Ohm
Current - Continuous Drain (Id) @ 25°C :
200mA Tc
Package :
Tube
Transistor Element Material :
SILICON
Surface Mount :
yes
Number of Terminations :
2
Drain Current-Max (Abs) (ID) :
0.2A
Transistor Polarity :
N-Channel
Mount :
Surface Mount
Power Dissipation-Max (Abs) :
33 W
Radiation Hardening :
No
Number of Terminals :
2
Manufacturer :
IXYS
Datasheets
IXTY02N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY02N120P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Channels:1 Channel, Number of Terminations:2, IXTY02N120P pinout, IXTY02N120P datasheet PDF, IXTY02N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY02N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY02N120P


N-Channel Tube 75 Ω @ 500mA, 10V ±20V 104pF @ 25V 4.7nC @ 10V 1200V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY02N120P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 40 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 104pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.In this device, the drain-source breakdown voltage is 1.2kV and VGS=1.2kV, so the drain-source breakdown voltage is 1.2kV in this case.A device can conduct a maximum continuous current of [0.2A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 0.6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1200 V to maintain normal operation.To operate this transistor, you will need a 1200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTY02N120P Features


the avalanche energy rating (Eas) is 40 mJ
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 1.2kV voltage
based on its rated peak drain current 0.6A.
a 1200V drain to source voltage (Vdss)


IXTY02N120P Applications


There are a lot of IXYS
IXTY02N120P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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