IXTY02N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

1200V

Published :

2004

Pulsed Drain Current-Max (IDM) :

0.6A

Element Configuration :

Single

ECCN Code :

EAR99

Base Product Number :

IXTY02

JESD-609 Code :

e3

Package :

Tube

Terminal Form :

Gull wing

Minimum Operating Temperature :

- 55 C

Drain Current-Max (Abs) (ID) :

0.2A

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

Factory Lead Time :

24 Weeks

Terminal Position :

Single

Power Dissipation-Max (Abs) :

33 W

Additional Feature :

AVALANCHE RATED

FET Feature :

-

Power Dissipation (Max) :

33W (Tc)

Number of Elements :

1

Lead Free :

Lead Free

Supplier Device Package :

TO-252, (D-Pak)

Qualification Status :

Not Qualified

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

200mA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Product Type :

MOSFET

Power Dissipation :

33W

Mounting Style :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

1.2kV

Manufacturer :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

104pF @ 25V

Surface Mount :

yes

Series :

Polar™

Drain-source On Resistance-Max :

0.075Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Category :

MOSFET

Transistor Polarity :

N-Channel

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Radiation Hardening :

No

Brand :

IXYS

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

75 Ω @ 500mA, 10V

Terminal Finish :

Matte Tin (Sn)

Product Status :

Active

Pin Count :

4

Power Dissipation-Max :

33W Tc

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-252

Number of Terminals :

2

Avalanche Energy Rating (Eas) :

40 mJ

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Configuration :

Single

DS Breakdown Voltage-Min :

1200 V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 100µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 10V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2