IXTY01N80

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Mfr.Part #
IXTY01N80
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 800V 100MA TO252AA
Stock
28,059
In Stock :
28,059

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Number of Channels :
1 Channel
Power Dissipation-Max :
25W Tc
Qualification Status :
Not Qualified
Base Product Number :
IXTY01
RoHS Status :
ROHS3 Compliant
Drain Current-Max (Abs) (ID) :
0.1A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss) :
800V
FET Type :
N-Channel
Supplier Device Package :
TO-252AA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Terminal Position :
Single
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
50 Ω
Case Connection :
DRAIN
Surface Mount :
yes
Width :
6.22 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Channel Mode :
Enhancement
Product Status :
Active
Mounting Style :
SMD/SMT
Brand :
IXYS
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Fall Time (Typ) :
28 ns
Number of Terminations :
2
Power Dissipation (Max) :
25W (Tc)
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Drain to Source Breakdown Voltage :
800V
Transistor Type :
1 N-Channel
Terminal Form :
Gull wing
Number of Elements :
1
Pin Count :
4
Mounting Type :
Surface Mount
Configuration :
Single
DS Breakdown Voltage-Min :
800 V
Product Category :
MOSFET
FET Feature :
--
Element Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
28 ns
JEDEC-95 Code :
TO-252AA
Height :
2.38 mm
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
100mA
Power Dissipation :
25W
Pulsed Drain Current-Max (IDM) :
0.4A
Polarity/Channel Type :
N-Channel
Vgs(th) (Max) @ Id :
4.5V @ 25μA
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Mount :
Surface Mount
Pbfree Code :
yes
Rise Time :
12ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Number of Terminals :
2
Rds On (Max) @ Id, Vgs :
50 Ω @ 100mA, 10V
JESD-30 Code :
R-PSSO-G2
Packaging :
Tube
Series :
--
Product Type :
MOSFET
Minimum Operating Temperature :
- 55 C
Subcategory :
MOSFETs
Published :
2003
Transistor Polarity :
N-Channel
Length :
6.73 mm
Package Shape :
RECTANGULAR
Datasheets
IXTY01N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY01N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXTY01N80 pinout, IXTY01N80 datasheet PDF, IXTY01N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY01N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY01N80


N-Channel Tube 50 Ω @ 100mA, 10V ±20V 60pF @ 25V 8nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY01N80 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 60pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.1A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28 ns.Peak drain current is 0.4A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTY01N80 Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.4A.
a 800V drain to source voltage (Vdss)


IXTY01N80 Applications


There are a lot of IXYS
IXTY01N80 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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