IXTY08N100D2
- Mfr.Part #
- IXTY08N100D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO252
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 21 Ω @ 400mA, 0V
- Number of Terminations :
- 2
- Mounting Style :
- SMD/SMT
- Published :
- 2009
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 57 ns
- Terminal Finish :
- Pure Tin (Sn)
- Channel Mode :
- Depletion
- Power Dissipation :
- 60W
- Transistor Type :
- 1 N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-252AA
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Mount :
- Surface Mount
- Product Category :
- MOSFET
- Package :
- Tube
- Mounting Type :
- Surface Mount
- Power Dissipation (Max) :
- 60W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Drain to Source Voltage (Vdss) :
- 1000V
- Vgs(th) (Max) @ Id :
- --
- Product Status :
- Active
- Brand :
- IXYS
- Power Dissipation-Max :
- 60W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 25V
- Maximum Operating Temperature :
- + 150 C
- Number of Elements :
- 1
- Product Type :
- MOSFET
- Series :
- --
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 19 Weeks
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 800mA
- FET Feature :
- Depletion Mode
- Supplier Device Package :
- TO-252, (D-Pak)
- Base Product Number :
- IXTY08
- Gate Charge (Qg) (Max) @ Vgs :
- 14.6nC @ 5V
- Datasheets
- IXTY08N100D2

N-Channel Tube 21 Ω @ 400mA, 0V ±20V 325pF @ 25V 14.6nC @ 5V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY08N100D2 Description
IXTY08N100D2 provided by IXYS belongs to the family of N-channel MOSFET which is a field effect transistor that can be widely used in analog circuits and digital circuits. Its characteristic is that the gate voltage is used to control the drain current. Based on its specific characteristics, the IXTY08N100D2 MOSFET is well-suited for audio amplifiers, start-up circuits, protection circuits, and more. It is supplied in the TO-252-3 package for space-constrained applications.
IXTY08N100D2 Features
Normally ON mode
Easy to mount
Space savings
High power density
Temperature range: -55° to +150°C
IXTY08N100D2 Applications
Audio amplifiers
Start-up circuits
Protection circuits
Ramp generators
Current regulators
Active loads
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