IXTY01N100D
- Mfr.Part #
- IXTY01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO252AA
- Stock
- 41,794
- In Stock :
- 41,794
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- FET Type :
- N-Channel
- Pin Count :
- 4
- Supplier Device Package :
- TO-252, (D-Pak)
- Pbfree Code :
- yes
- Brand :
- IXYS
- Transistor Element Material :
- SILICON
- Mounting Style :
- SMD/SMT
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 110 Ω
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Case Connection :
- DRAIN
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXTY01
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- 1 N-Channel
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 0.4A
- Power Dissipation :
- 1.1W
- Fall Time (Typ) :
- 6 ns
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 1000 V
- Mount :
- Surface Mount
- HTS Code :
- 8541.29.00.95
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Continuous Drain Current (ID) :
- 100mA
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- JEDEC-95 Code :
- TO-252AA
- Series :
- --
- Published :
- 2006
- Continuous Drain Current Id :
- 400mA
- Gate to Source Voltage (Vgs) :
- 20V
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 6ns
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 1000V
- Terminal Position :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Terminations :
- 2
- Factory Lead Time :
- 24 Weeks
- Qualification :
- -
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- --
- ECCN Code :
- EAR99
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Channel Mode :
- Depletion
- Number of Terminals :
- 2
- Operating Mode :
- Depletion Mode
- Width :
- 6.22 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- FET Feature :
- Depletion Mode
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1 Channel
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 30 ns
- Channel Type :
- N Channel
- Configuration :
- Single
- Product Type :
- MOSFET
- Lead Free :
- Lead Free
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 1kV
- Power Dissipation-Max (Abs) :
- 25 W
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Packaging :
- Tube
- Product :
- MOSFET Small Signal
- Length :
- 6.73 mm
- Height :
- 2.38 mm
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Pure Tin (Sn)
- Resistance :
- 110Ohm
- Product Status :
- Active
- Datasheets
- IXTY01N100D

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY01N100D Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 120pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).
IXTY01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4A.
a 1000V drain to source voltage (Vdss)
IXTY01N100D Applications
There are a lot of IXYS
IXTY01N100D applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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