IXTY01N100D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

Height :

2.38 mm

Channel Type :

N Channel

Length :

6.73 mm

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Radiation Hardening :

No

Series :

--

Current - Continuous Drain (Id) @ 25°C :

100mA Tc

Number of Pins :

3

Configuration :

Single

Published :

2006

Mount :

Surface Mount

Qualification Status :

Not Qualified

Width :

6.22 mm

Package :

Tube

Qualification :

-

Base Product Number :

IXTY01

Drain to Source Voltage (Vdss) :

1000V

Terminal Finish :

Pure Tin (Sn)

JEDEC-95 Code :

TO-252AA

Rise Time :

6ns

Element Configuration :

Single

Power Dissipation (Max) :

1.1W (Ta), 25W (Tc)

Fall Time (Typ) :

6 ns

Manufacturer :

IXYS

Factory Lead Time :

24 Weeks

Operating Mode :

Depletion Mode

Continuous Drain Current (ID) :

100mA

Rds On (Max) @ Id, Vgs :

110 Ω @ 50mA, 0V

Product Type :

MOSFET

Channel Mode :

Depletion

Drain-source On Resistance-Max :

110 Ω

ECCN Code :

EAR99

Supplier Device Package :

TO-252, (D-Pak)

Turn-Off Delay Time :

30 ns

Mounting Type :

Surface Mount

Product Category :

MOSFET

Power Dissipation :

1.1W

Drive Voltage (Max Rds On, Min Rds On) :

--

Number of Terminals :

2

Mounting Style :

SMD/SMT

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

1kV

Transistor Element Material :

SILICON

Brand :

IXYS

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

FET Feature :

Depletion Mode

Resistance :

110Ohm

Surface Mount :

yes

HTS Code :

8541.29.00.95

Gate Charge (Qg) (Max) @ Vgs :

5.8 nC @ 5 V

DS Breakdown Voltage-Min :

1000 V

Pulsed Drain Current-Max (IDM) :

0.4A

Case Connection :

DRAIN

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current Id :

400mA

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Transistor Polarity :

N-Channel

JESD-30 Code :

R-PSSO-G2

Transistor Type :

1 N-Channel

Product :

MOSFET Small Signal

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

--

Power Dissipation-Max (Abs) :

25 W

Number of Elements :

1

Packaging :

Tube

Number of Channels :

1 Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Product Status :

Active

Pin Count :

4

Terminal Position :

Single

Lead Free :

Lead Free

Terminal Form :

Gull wing

Number of Terminations :

2

Power Dissipation-Max :

1.1W Ta 25W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63