IXTY01N100D
- Mfr.Part #
- IXTY01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO252AA
- Stock
- 41,794
- In Stock :
- 41,794
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- SMD/SMT
- Number of Terminals :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1 Channel
- Radiation Hardening :
- No
- Product :
- MOSFET Small Signal
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max (Abs) :
- 25 W
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Transistor Type :
- 1 N-Channel
- Terminal Finish :
- Pure Tin (Sn)
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 0.4A
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-252AA
- Mount :
- Surface Mount
- Width :
- 6.22 mm
- Channel Mode :
- Depletion
- Pin Count :
- 4
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Series :
- --
- Factory Lead Time :
- 24 Weeks
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 1000V
- Brand :
- IXYS
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Supplier Device Package :
- TO-252, (D-Pak)
- Reach Compliance Code :
- Compliant
- HTS Code :
- 8541.29.00.95
- Qualification Status :
- Not Qualified
- Product Category :
- MOSFET
- Manufacturer :
- IXYS
- Continuous Drain Current Id :
- 400mA
- Drain to Source Breakdown Voltage :
- 1kV
- Turn-Off Delay Time :
- 30 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- Qualification :
- -
- Surface Mount :
- yes
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 6 ns
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Number of Elements :
- 1
- Operating Mode :
- Depletion Mode
- Base Product Number :
- IXTY01
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 110 Ω
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- Transistor Application :
- SWITCHING
- Channel Type :
- N Channel
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- --
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 6ns
- Height :
- 2.38 mm
- Power Dissipation :
- 1.1W
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 1000 V
- Length :
- 6.73 mm
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 100mA
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Product Status :
- Active
- Resistance :
- 110Ohm
- FET Feature :
- Depletion Mode
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Product Type :
- MOSFET
- Datasheets
- IXTY01N100D

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY01N100D Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 120pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).
IXTY01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4A.
a 1000V drain to source voltage (Vdss)
IXTY01N100D Applications
There are a lot of IXYS
IXTY01N100D applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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