IXTY01N100D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Drain-source On Resistance-Max :

110 Ω

Reach Compliance Code :

Compliant

Surface Mount :

yes

Product :

MOSFET Small Signal

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-252, (D-Pak)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

--

Length :

6.73 mm

Qualification Status :

Not Qualified

Channel Type :

N Channel

Maximum Operating Temperature :

+ 150 C

FET Type :

N-Channel

Pbfree Code :

yes

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Qualification :

-

Published :

2006

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Number of Elements :

1

Series :

--

Product Category :

MOSFET

Lead Free :

Lead Free

Mount :

Surface Mount

Drive Voltage (Max Rds On, Min Rds On) :

--

Terminal Finish :

Pure Tin (Sn)

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

1000V

Mounting Style :

SMD/SMT

Height :

2.38 mm

Product Type :

MOSFET

Power Dissipation-Max (Abs) :

25 W

Terminal Form :

Gull wing

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

110 Ω @ 50mA, 0V

Power Dissipation :

1.1W

FET Feature :

Depletion Mode

HTS Code :

8541.29.00.95

Width :

6.22 mm

DS Breakdown Voltage-Min :

1000 V

Factory Lead Time :

24 Weeks

Pin Count :

4

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

100mA Tc

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Number of Terminations :

2

Case Connection :

DRAIN

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

0.4A

Manufacturer :

IXYS

Packaging :

Tube

Channel Mode :

Depletion

Continuous Drain Current Id :

400mA

Continuous Drain Current (ID) :

100mA

Resistance :

110Ohm

Brand :

IXYS

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

6 ns

Power Dissipation (Max) :

1.1W (Ta), 25W (Tc)

Base Product Number :

IXTY01

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

Element Configuration :

Single

Operating Mode :

Depletion Mode

Power Dissipation-Max :

1.1W Ta 25W Tc

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

1kV

Rise Time :

6ns

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Turn-Off Delay Time :

30 ns

Number of Terminals :

2

Gate Charge (Qg) (Max) @ Vgs :

5.8 nC @ 5 V