IXTY01N100D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

SMD/SMT

Number of Terminals :

2

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1 Channel

Radiation Hardening :

No

Product :

MOSFET Small Signal

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

5.8 nC @ 5 V

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max (Abs) :

25 W

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Transistor Type :

1 N-Channel

Terminal Finish :

Pure Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

0.4A

FET Type :

N-Channel

JEDEC-95 Code :

TO-252AA

Mount :

Surface Mount

Width :

6.22 mm

Channel Mode :

Depletion

Pin Count :

4

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max :

1.1W Ta 25W Tc

Series :

--

Factory Lead Time :

24 Weeks

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

1000V

Brand :

IXYS

Drive Voltage (Max Rds On, Min Rds On) :

--

Supplier Device Package :

TO-252, (D-Pak)

Reach Compliance Code :

Compliant

HTS Code :

8541.29.00.95

Qualification Status :

Not Qualified

Product Category :

MOSFET

Manufacturer :

IXYS

Continuous Drain Current Id :

400mA

Drain to Source Breakdown Voltage :

1kV

Turn-Off Delay Time :

30 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

Transistor Polarity :

N-Channel

Terminal Position :

Single

Qualification :

-

Surface Mount :

yes

Packaging :

Tube

Vgs (Max) :

±20V

Fall Time (Typ) :

6 ns

Power Dissipation (Max) :

1.1W (Ta), 25W (Tc)

Number of Elements :

1

Operating Mode :

Depletion Mode

Base Product Number :

IXTY01

Mounting Type :

Surface Mount

Pbfree Code :

yes

Drain-source On Resistance-Max :

110 Ω

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

110 Ω @ 50mA, 0V

Transistor Application :

SWITCHING

Channel Type :

N Channel

Number of Pins :

3

Vgs(th) (Max) @ Id :

--

Terminal Form :

Gull wing

Element Configuration :

Single

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Rise Time :

6ns

Height :

2.38 mm

Power Dissipation :

1.1W

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

1000 V

Length :

6.73 mm

Case Connection :

DRAIN

Continuous Drain Current (ID) :

100mA

Current - Continuous Drain (Id) @ 25°C :

100mA Tc

Product Status :

Active

Resistance :

110Ohm

FET Feature :

Depletion Mode

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Product Type :

MOSFET