IXTY01N100D
- Mfr.Part #
- IXTY01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO252AA
- Stock
- 41,794
- In Stock :
- 41,794
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 110 Ω
- Reach Compliance Code :
- Compliant
- Surface Mount :
- yes
- Product :
- MOSFET Small Signal
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-252, (D-Pak)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- --
- Length :
- 6.73 mm
- Qualification Status :
- Not Qualified
- Channel Type :
- N Channel
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Qualification :
- -
- Published :
- 2006
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Series :
- --
- Product Category :
- MOSFET
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Terminal Finish :
- Pure Tin (Sn)
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 1000V
- Mounting Style :
- SMD/SMT
- Height :
- 2.38 mm
- Product Type :
- MOSFET
- Power Dissipation-Max (Abs) :
- 25 W
- Terminal Form :
- Gull wing
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- Power Dissipation :
- 1.1W
- FET Feature :
- Depletion Mode
- HTS Code :
- 8541.29.00.95
- Width :
- 6.22 mm
- DS Breakdown Voltage-Min :
- 1000 V
- Factory Lead Time :
- 24 Weeks
- Pin Count :
- 4
- JEDEC-95 Code :
- TO-252AA
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 0.4A
- Manufacturer :
- IXYS
- Packaging :
- Tube
- Channel Mode :
- Depletion
- Continuous Drain Current Id :
- 400mA
- Continuous Drain Current (ID) :
- 100mA
- Resistance :
- 110Ohm
- Brand :
- IXYS
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 6 ns
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Base Product Number :
- IXTY01
- Vgs (Max) :
- ±20V
- Transistor Type :
- 1 N-Channel
- Element Configuration :
- Single
- Operating Mode :
- Depletion Mode
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- ECCN Code :
- EAR99
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 1kV
- Rise Time :
- 6ns
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 30 ns
- Number of Terminals :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- Datasheets
- IXTY01N100D

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY01N100D Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 120pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).
IXTY01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4A.
a 1000V drain to source voltage (Vdss)
IXTY01N100D Applications
There are a lot of IXYS
IXTY01N100D applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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