IXTY02N50D
- Mfr.Part #
- IXTY02N50D
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 200MA TO252
- Stock
- 4,624
- In Stock :
- 4,624
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 4ns
- JESD-609 Code :
- e3
- Base Product Number :
- IXTY02
- Rds On (Max) @ Id, Vgs :
- 30 Ω @ 50mA, 0V
- Operating Temperature :
- -55°C~150°C TJ
- Product :
- MOSFET Small Signal
- HTS Code :
- 8541.29.00.95
- Package Shape :
- RECTANGULAR
- Maximum Operating Temperature :
- + 150 C
- Transistor Type :
- 1 N-Channel
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-252AA
- Continuous Drain Current (ID) :
- 200mA
- Mount :
- Surface Mount
- Length :
- 6.73 mm
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- PURE TIN
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Type :
- -
- Number of Elements :
- 1
- Supplier Device Package :
- TO-252, (D-Pak)
- Power Dissipation :
- 1.1W
- Number of Terminations :
- 2
- Subcategory :
- MOSFETs
- Channel Mode :
- Depletion
- Case Connection :
- DRAIN
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 0.8A
- Series :
- --
- Vgs(th) (Max) @ Id :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Width :
- 6.22 mm
- Drain to Source Voltage (Vdss) :
- 500V
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS :
- Details
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Position :
- Single
- Fall Time (Typ) :
- 4 ns
- Factory Lead Time :
- 24 Weeks
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Number of Channels :
- 1 Channel
- DS Breakdown Voltage-Min :
- 500 V
- Turn-Off Delay Time :
- 28 ns
- Transistor Polarity :
- N-Channel
- Pin Count :
- 4
- Number of Terminals :
- 2
- Terminal Form :
- Gull wing
- FET Feature :
- Depletion Mode
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Mounting Style :
- SMD/SMT
- Mounting Type :
- Surface Mount
- Height :
- 2.38 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Pbfree Code :
- yes
- Product Status :
- Active
- Operating Mode :
- Depletion Mode
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- Drain-source On Resistance-Max :
- 30 Ω
- Surface Mount :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Configuration :
- Single
- Manufacturer :
- IXYS
- Datasheets
- IXTY02N50D

N-Channel Tube 30 Ω @ 50mA, 0V ±20V 120pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY02N50D Overview
The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 0.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.
IXTY02N50D Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)
IXTY02N50D Applications
There are a lot of IXYS
IXTY02N50D applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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