IXTY02N50D
- Mfr.Part #
- IXTY02N50D
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 200MA TO252
- Stock
- 4,624
- In Stock :
- 4,624
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Qualification Status :
- Not Qualified
- Operating Mode :
- Depletion Mode
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Vgs(th) (Max) @ Id :
- --
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 30 Ω
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- HTS Code :
- 8541.29.00.95
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Number of Terminals :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Transistor Polarity :
- N-Channel
- Pin Count :
- 4
- Continuous Drain Current (ID) :
- 200mA
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Depletion
- Product Category :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Transistor Application :
- SWITCHING
- Subcategory :
- MOSFETs
- Brand :
- IXYS
- Fall Time (Typ) :
- 4 ns
- Mount :
- Surface Mount
- Minimum Operating Temperature :
- - 55 C
- Pulsed Drain Current-Max (IDM) :
- 0.8A
- JEDEC-95 Code :
- TO-252AA
- Product Type :
- MOSFET
- Width :
- 6.22 mm
- Number of Terminations :
- 2
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Turn-Off Delay Time :
- 28 ns
- Base Product Number :
- IXTY02
- FET Feature :
- Depletion Mode
- Height :
- 2.38 mm
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.1W
- JESD-609 Code :
- e3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Surface Mount
- Terminal Finish :
- PURE TIN
- Transistor Element Material :
- SILICON
- Type :
- -
- Transistor Type :
- 1 N-Channel
- Product :
- MOSFET Small Signal
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.73 mm
- Series :
- --
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- RoHS :
- Details
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 500 V
- Number of Channels :
- 1 Channel
- Reach Compliance Code :
- Unknown
- Published :
- 2006
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Style :
- SMD/SMT
- Rise Time :
- 4ns
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Case Connection :
- DRAIN
- Factory Lead Time :
- 24 Weeks
- Product Status :
- Active
- Supplier Device Package :
- TO-252, (D-Pak)
- Rds On (Max) @ Id, Vgs :
- 30 Ω @ 50mA, 0V
- Datasheets
- IXTY02N50D

N-Channel Tube 30 Ω @ 50mA, 0V ±20V 120pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY02N50D Overview
The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 0.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.
IXTY02N50D Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)
IXTY02N50D Applications
There are a lot of IXYS
IXTY02N50D applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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