IXTY02N50D

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Mfr.Part #
IXTY02N50D
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 200MA TO252
Stock
4,624
In Stock :
4,624

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tube
Qualification Status :
Not Qualified
Operating Mode :
Depletion Mode
Pbfree Code :
yes
Manufacturer :
IXYS
Drain to Source Voltage (Vdss) :
500V
Power Dissipation-Max :
1.1W Ta 25W Tc
Vgs(th) (Max) @ Id :
--
Terminal Form :
Gull wing
Drain-source On Resistance-Max :
30 Ω
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
HTS Code :
8541.29.00.95
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
500V
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Element Configuration :
Single
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Number of Terminals :
2
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
yes
Transistor Polarity :
N-Channel
Pin Count :
4
Continuous Drain Current (ID) :
200mA
RoHS Status :
ROHS3 Compliant
Channel Mode :
Depletion
Product Category :
MOSFET
Maximum Operating Temperature :
+ 150 C
Transistor Application :
SWITCHING
Subcategory :
MOSFETs
Brand :
IXYS
Fall Time (Typ) :
4 ns
Mount :
Surface Mount
Minimum Operating Temperature :
- 55 C
Pulsed Drain Current-Max (IDM) :
0.8A
JEDEC-95 Code :
TO-252AA
Product Type :
MOSFET
Width :
6.22 mm
Number of Terminations :
2
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
200mA Tc
Turn-Off Delay Time :
28 ns
Base Product Number :
IXTY02
FET Feature :
Depletion Mode
Height :
2.38 mm
JESD-30 Code :
R-PSSO-G2
Lead Free :
Lead Free
Power Dissipation :
1.1W
JESD-609 Code :
e3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Surface Mount
Terminal Finish :
PURE TIN
Transistor Element Material :
SILICON
Type :
-
Transistor Type :
1 N-Channel
Product :
MOSFET Small Signal
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
6.73 mm
Series :
--
Configuration :
Single
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On, Min Rds On) :
--
RoHS :
Details
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
ECCN Code :
EAR99
DS Breakdown Voltage-Min :
500 V
Number of Channels :
1 Channel
Reach Compliance Code :
Unknown
Published :
2006
Vgs (Max) :
±20V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Style :
SMD/SMT
Rise Time :
4ns
Drain Current-Max (Abs) (ID) :
0.2A
Case Connection :
DRAIN
Factory Lead Time :
24 Weeks
Product Status :
Active
Supplier Device Package :
TO-252, (D-Pak)
Rds On (Max) @ Id, Vgs :
30 Ω @ 50mA, 0V
Datasheets
IXTY02N50D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY02N50D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Type:-, Number of Channels:1 Channel, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IXTY02N50D pinout, IXTY02N50D datasheet PDF, IXTY02N50D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY02N50D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY02N50D


N-Channel Tube 30 Ω @ 50mA, 0V ±20V 120pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY02N50D Overview


The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 0.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.

IXTY02N50D Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)


IXTY02N50D Applications


There are a lot of IXYS
IXTY02N50D applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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