IXTY02N50D
- Mfr.Part #
- IXTY02N50D
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 200MA TO252
- Stock
- 4,624
- In Stock :
- 4,624
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTY02
- Maximum Operating Temperature :
- + 150 C
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- ECCN Code :
- EAR99
- Channel Mode :
- Depletion
- Type :
- -
- Reach Compliance Code :
- Unknown
- Product Category :
- MOSFET
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 4
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 30 Ω
- Lead Free :
- Lead Free
- Series :
- --
- Surface Mount :
- yes
- Mounting Style :
- SMD/SMT
- Product :
- MOSFET Small Signal
- Manufacturer :
- IXYS
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-252AA
- Width :
- 6.22 mm
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 30 Ω @ 50mA, 0V
- Turn-Off Delay Time :
- 28 ns
- Published :
- 2006
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- Depletion Mode
- Rise Time :
- 4ns
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 1 N-Channel
- Supplier Device Package :
- TO-252, (D-Pak)
- Transistor Polarity :
- N-Channel
- Factory Lead Time :
- 24 Weeks
- Package :
- Tube
- Fall Time (Typ) :
- 4 ns
- Height :
- 2.38 mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) :
- 500V
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- --
- Power Dissipation :
- 1.1W
- Pulsed Drain Current-Max (IDM) :
- 0.8A
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Application :
- SWITCHING
- FET Feature :
- Depletion Mode
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Minimum Operating Temperature :
- - 55 C
- Subcategory :
- MOSFETs
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Product Type :
- MOSFET
- JESD-609 Code :
- e3
- Length :
- 6.73 mm
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- Element Configuration :
- Single
- HTS Code :
- 8541.29.00.95
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 200mA
- RoHS :
- Details
- Number of Terminals :
- 2
- DS Breakdown Voltage-Min :
- 500 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Terminal Form :
- Gull wing
- Product Status :
- Active
- Pbfree Code :
- yes
- Terminal Finish :
- PURE TIN
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXTY02N50D

N-Channel Tube 30 Ω @ 50mA, 0V ±20V 120pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY02N50D Overview
The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 0.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.
IXTY02N50D Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)
IXTY02N50D Applications
There are a lot of IXYS
IXTY02N50D applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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