IXTY08N100P
- Mfr.Part #
- IXTY08N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO252
- Stock
- 6,705
- In Stock :
- 6,705
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Product Category :
- MOSFET
- Manufacturer :
- IXYS
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Input Capacitance :
- 240 pF
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 1000 V
- Power Dissipation (Max) :
- 42W (Tc)
- Power Dissipation :
- 42W
- Factory Lead Time :
- 24 Weeks
- Package Shape :
- RECTANGULAR
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On Max :
- 20 Ω
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Number of Channels :
- 1 Channel
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Transistor Polarity :
- N-Channel
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 1000V
- Min Operating Temperature :
- -55 °C
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Breakdown Voltage :
- 1kV
- Number of Terminals :
- 2
- Base Product Number :
- IXTY08
- Number of Elements :
- 1
- Max Operating Temperature :
- 150 °C
- Pulsed Drain Current-Max (IDM) :
- 1.8 A
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 2.38 mm
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 800mA
- Product Status :
- Active
- Drain Current-Max (Abs) (ID) :
- 0.8A
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- Supplier Device Package :
- TO-252, (D-Pak)
- Power Dissipation-Max (Abs) :
- 42 W
- Drain to Source Resistance :
- 20 Ω
- Configuration :
- Single
- Package :
- Tube
- Published :
- 2009
- Surface Mount :
- yes
- Power Dissipation-Max :
- 42W Tc
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Brand :
- IXYS
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 34 ns
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 500mA, 10V
- Case Connection :
- DRAIN
- Rise Time :
- 37ns
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 35 ns
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- JEDEC-95 Code :
- TO-252
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Tube
- Reach Compliance Code :
- Compliant
- Mounting Style :
- SMD/SMT
- Length :
- 6.73 mm
- Channel Mode :
- Enhancement
- Width :
- 6.22 mm
- Max Power Dissipation :
- 42 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 25V
- Series :
- Polar™
- RoHS :
- Details
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 20 Ω
- Additional Feature :
- AVALANCHE RATED
- Datasheets
- IXTY08N100P
IXTY08N100P Documents

N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY08N100P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 240pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 800mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [0.8A] according to its drain current.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1.8 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 20 Ω.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTY08N100P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8 A.
single MOSFETs transistor is 20 Ω
a 1000V drain to source voltage (Vdss)
IXTY08N100P Applications
There are a lot of IXYS
IXTY08N100P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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