IXTY08N100P

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Mfr.Part #
IXTY08N100P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1000V 800MA TO252
Stock
6,705
In Stock :
6,705

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
37ns
Vgs(th) (Max) @ Id :
4V @ 50μA
Series :
Polar™
ECCN Code :
EAR99
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
20 Ω @ 500mA, 10V
Drain to Source Voltage (Vdss) :
1000V
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Radiation Hardening :
No
Mounting Type :
Surface Mount
Number of Terminations :
2
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Package :
Tube
JESD-609 Code :
e3
Drain Current-Max (Abs) (ID) :
0.8A
Min Operating Temperature :
-55 °C
RoHS :
Details
Element Configuration :
Single
Pbfree Code :
yes
Turn-Off Delay Time :
35 ns
Terminal Position :
Single
DS Breakdown Voltage-Min :
1000 V
FET Feature :
--
Minimum Operating Temperature :
- 55 C
Rds On Max :
20 Ω
Package Shape :
RECTANGULAR
JEDEC-95 Code :
TO-252
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Transistor Type :
1 N-Channel
FET Type :
N-Channel
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Maximum Operating Temperature :
+ 150 C
Fall Time (Typ) :
34 ns
Vgs (Max) :
±20V
Terminal Form :
Gull wing
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Product Type :
MOSFET
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Height :
2.38 mm
Power Dissipation (Max) :
42W (Tc)
Surface Mount :
yes
Max Power Dissipation :
42 W
Max Operating Temperature :
150 °C
Brand :
IXYS
Power Dissipation-Max (Abs) :
42 W
Manufacturer :
IXYS
Terminal Finish :
Matte Tin (Sn)
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
800mA
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Configuration :
Single
Power Dissipation-Max :
42W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
1kV
Reach Compliance Code :
Compliant
Number of Elements :
1
Width :
6.22 mm
Length :
6.73 mm
Avalanche Energy Rating (Eas) :
80 mJ
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Factory Lead Time :
24 Weeks
Power Dissipation :
42W
Product Status :
Active
Supplier Device Package :
TO-252, (D-Pak)
Mount :
Surface Mount
Published :
2009
Drain to Source Resistance :
20 Ω
Drain-source On Resistance-Max :
20 Ω
Number of Terminals :
2
Channel Mode :
Enhancement
Pulsed Drain Current-Max (IDM) :
1.8 A
Operating Temperature :
-55°C~150°C TJ
Mounting Style :
SMD/SMT
Input Capacitance :
240 pF
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number :
IXTY08
Gate to Source Voltage (Vgs) :
20V
JESD-30 Code :
R-PSSO-G2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY08N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IXTY08N100P pinout, IXTY08N100P datasheet PDF, IXTY08N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY08N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY08N100P


N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY08N100P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 240pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 800mA amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [0.8A] according to its drain current.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1.8 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 20 Ω.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTY08N100P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8 A.
single MOSFETs transistor is 20 Ω
a 1000V drain to source voltage (Vdss)


IXTY08N100P Applications


There are a lot of IXYS
IXTY08N100P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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