IXTX600N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

20ns

Current - Continuous Drain (Id) @ 25°C :

600A Tc

RoHS Status :

ROHS3 Compliant

Package :

Tube

Drain-source On Resistance-Max :

0.0015 Ω

Product Type :

MOSFET

Number of Pins :

247

Factory Lead Time :

28 Weeks

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

1600 A

Terminal Finish :

TIN SILVER COPPER

Configuration :

SINGLE WITH BUILT-IN DIODE

Output Current :

600A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Package / Case :

TO-247-3

FET Type :

N-Channel

Brand :

IXYS

Number of Terminals :

3

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

40 V

Base Product Number :

IXTX600

Supplier Device Package :

PLUS247™-3

Power Dissipation-Max :

1250W Tc

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Channel Mode :

Enhancement

FET Feature :

--

Vgs (Max) :

±20V

Power Dissipation (Max) :

1250W (Tc)

Continuous Drain Current (ID) :

600A

JESD-30 Code :

R-PSIP-T3

Pin Count :

3

Number of Drivers :

1

Fall Time (Typ) :

250 ns

Number of Terminations :

3

RoHS :

Details

Reach Compliance Code :

Unknown

Terminal Position :

Single

Product Status :

Active

Drain to Source Voltage (Vdss) :

40V

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

Product Category :

MOSFET

Published :

2009

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

3000 mJ

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

40000pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

FRFET®, SupreMOS®

Turn-Off Delay Time :

90 ns

Turn On Delay Time :

40 ns

Product :

MOSFET Gate Drivers

Drain Current-Max (Abs) (ID) :

600 A

Maximum Operating Temperature :

+ 175 C

Power Dissipation-Max (Abs) :

1250 W

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

590nC @ 10V

Nominal Supply Current :

200A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Tradename :

HiPerFET

Manufacturer :

IXYS

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Transistor Polarity :

N-Channel

Pbfree Code :

yes

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 100A, 10V

Output Voltage :

40V