IXTX120P20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Type :

TrenchP Power MOSFET

Packaging :

Tube

Transistor Polarity :

P-Channel

Polarity/Channel Type :

P-Channel

Product Status :

Active

Package :

Tube

Length :

16.13 mm

FET Type :

P-Channel

Pin Count :

3

Mounting Style :

Through Hole

Tradename :

TrenchP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Continuous Drain Current (ID) :

120A

ECCN Code :

EAR99

Number of Terminals :

3

Factory Lead Time :

17 Weeks

Reach Compliance Code :

Compliant

Series :

TrenchP™

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

200V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

3000 mJ

RoHS Status :

ROHS3 Compliant

FET Feature :

--

Channel Mode :

Enhancement

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

400A

Package / Case :

TO-247-3

Product Type :

MOSFET

Supplier Device Package :

PLUS247™-3

Package Shape :

RECTANGULAR

Terminal Position :

Single

Manufacturer :

IXYS

Drain to Source Voltage (Vdss) :

200V

RoHS :

Details

Rise Time :

85 ns

Max Power Dissipation :

1.04kW

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

740nC @ 10V

Power Dissipation-Max (Abs) :

1040 W

Minimum Operating Temperature :

- 55 C

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Mount :

Through Hole

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

120 A

Terminal Form :

THROUGH-HOLE

Operating Temperature (Max) :

150°C

Rds On (Max) @ Id, Vgs :

30m Ω @ 60A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

73000pF @ 25V

Case Connection :

DRAIN

Width :

5.21 mm

Base Product Number :

IXTX120

Power Dissipation (Max) :

--

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Through Hole

Operating Temperature :

--

Number of Channels :

1 Channel

Height :

21.34 mm

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.03Ohm

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Product Category :

MOSFET