IXTX22N100L
- Mfr.Part #
- IXTX22N100L
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 22A PLUS247-3
- Stock
- 18,481
- In Stock :
- 18,481
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 16.13mm
- Terminal Finish :
- TIN SILVER COPPER
- Supplier Device Package :
- PLUS247™-3
- Transistor Element Material :
- SILICON
- Series :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Base Product Number :
- IXTX22
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 11A, 20V
- Drain to Source Breakdown Voltage :
- 1kV
- Continuous Drain Current (ID) :
- 22A
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 1000V
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Elements :
- 1
- Packaging :
- Tube
- Product Status :
- Active
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 80 ns
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 247
- Width :
- 5.21mm
- Gate to Source Voltage (Vgs) :
- 30V
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 15V
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1 Channel
- Pulsed Drain Current-Max (IDM) :
- 50A
- Power Dissipation-Max :
- 700W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e1
- Resistance :
- 600mOhm
- Package :
- Tube
- Fall Time (Typ) :
- 50 ns
- Power Dissipation (Max) :
- 700W (Tc)
- Height :
- 21.34mm
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Number of Terminations :
- 3
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 700W
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 7050pF @ 25V
- Transistor Type :
- 1 N-Channel
- Maximum Operating Temperature :
- + 150 C
- Configuration :
- Single
- Channel Mode :
- Enhancement
- Published :
- 2007
- Rise Time :
- 35ns
- Pin Count :
- 3
- Turn On Delay Time :
- 36 ns
- Qualification Status :
- Not Qualified
- Manufacturer :
- IXYS
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- RoHS :
- Details
- Datasheets
- IXTX22N100L
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N-Channel Tube 600m Ω @ 11A, 20V ±30V 7050pF @ 25V 270nC @ 15V 1000V TO-247-3
IXTX22N100L Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7050pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 80 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 36 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTX22N100L Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)
IXTX22N100L Applications
There are a lot of IXYS
IXTX22N100L applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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