IXTX22N100L

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Mfr.Part #
IXTX22N100L
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 22A PLUS247-3
Stock
18,481
In Stock :
18,481

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
16.13mm
Terminal Finish :
TIN SILVER COPPER
Supplier Device Package :
PLUS247™-3
Transistor Element Material :
SILICON
Series :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Unknown
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Mounting Type :
Through Hole
Mount :
Through Hole
Lead Free :
Lead Free
Base Product Number :
IXTX22
Rds On (Max) @ Id, Vgs :
600m Ω @ 11A, 20V
Drain to Source Breakdown Voltage :
1kV
Continuous Drain Current (ID) :
22A
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Brand :
IXYS
Drain to Source Voltage (Vdss) :
1000V
Case Connection :
Isolated
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Elements :
1
Packaging :
Tube
Product Status :
Active
FET Type :
N-Channel
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
80 ns
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
247
Width :
5.21mm
Gate to Source Voltage (Vgs) :
30V
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 15V
Minimum Operating Temperature :
- 55 C
JESD-30 Code :
R-PSFM-T3
Package / Case :
TO-247-3
Operating Temperature :
-55°C~150°C TJ
Number of Channels :
1 Channel
Pulsed Drain Current-Max (IDM) :
50A
Power Dissipation-Max :
700W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
Through Hole
Transistor Application :
SWITCHING
JESD-609 Code :
e1
Resistance :
600mOhm
Package :
Tube
Fall Time (Typ) :
50 ns
Power Dissipation (Max) :
700W (Tc)
Height :
21.34mm
Vgs (Max) :
±30V
Avalanche Energy Rating (Eas) :
1500 mJ
Number of Terminations :
3
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
700W
Product Category :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
7050pF @ 25V
Transistor Type :
1 N-Channel
Maximum Operating Temperature :
+ 150 C
Configuration :
Single
Channel Mode :
Enhancement
Published :
2007
Rise Time :
35ns
Pin Count :
3
Turn On Delay Time :
36 ns
Qualification Status :
Not Qualified
Manufacturer :
IXYS
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
RoHS :
Details
Datasheets
IXTX22N100L
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTX22N100L from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:247, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, IXTX22N100L pinout, IXTX22N100L datasheet PDF, IXTX22N100L amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTX22N100L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTX22N100L


N-Channel Tube 600m Ω @ 11A, 20V ±30V 7050pF @ 25V 270nC @ 15V 1000V TO-247-3

IXTX22N100L Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7050pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 80 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 36 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTX22N100L Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)


IXTX22N100L Applications


There are a lot of IXYS
IXTX22N100L applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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