IXTX120N65X2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

15 Weeks

Continuous Drain Current Id :

120A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Product Number :

IXTX120

Pin Count :

3 +Tab

Power Dissipation (Max) :

1250W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Drain to Source Voltage (Vdss) :

650V

Polarity :

N

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Product Status :

Active

MSL :

MSL 1 - Unlimited

Minimum Operating Temperature :

-55 °C

Published :

2015

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Rds On (Max) @ Id, Vgs :

24m Ω @ 60A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

13600pF @ 25V

Number of Channels :

1 Channel

FET Type :

N-Channel

Mounting Style :

Through Hole

Series :

--

Packaging :

Tube

Reach Compliance Code :

Unknown

Supplier Device Package :

PLUS247™-3

Drain-Source On-Volt :

650(V)

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Rise Time :

24 ns

Package Type :

PLUS 247

Number of Elements per Chip :

1

Qualification :

-

Manufacturer :

IXYS

Package / Case :

TO-247-3

ECCN Code :

EAR99

Channel Type :

N Channel

Brand :

IXYS

Length :

16.13mm

Power Dissipation :

1250(W)

Number of Elements :

1

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

FET Feature :

--

Maximum Operating Temperature :

+150 °C

Product Category :

MOSFET

Vgs (Max) :

±30V

Operating Temp Range :

-55C to 150C

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Height :

5.21mm

Channel Mode :

Enhancement

Tradename :

HiPerFET

Product :

Power MOSFET Modules

Product Type :

MOSFET

Power Dissipation-Max :

1250W Tc

Mounting :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Details

Subcategory :

MOSFETs

Transistor Polarity :

N-Channel

Operating Temperature Classification :

Military

Continuous Drain Current :

120(A)

Continuous Drain Current (ID) :

120A

Width :

21.34mm

Type :

Power MOSFET

Package :

Tube

Rad Hardened :

No

Operating Temperature :

-55°C~150°C TJ

Gate-Source Voltage (Max) :

±30(V)