IXTX120N65X2
- Mfr.Part #
- IXTX120N65X2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 120A PLUS247-3
- Stock
- 168
- In Stock :
- 168
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- -55 °C
- Mounting :
- Through Hole
- ECCN Code :
- EAR99
- Product Type :
- MOSFET
- Gate-Source Voltage (Max) :
- ±30(V)
- Drain-Source On-Volt :
- 650(V)
- Power Dissipation :
- 1250(W)
- Supplier Device Package :
- PLUS247™-3
- FET Feature :
- --
- Factory Lead Time :
- 15 Weeks
- MSL :
- MSL 1 - Unlimited
- Operating Temperature Classification :
- Military
- Package Type :
- PLUS 247
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Configuration :
- Single
- Power Dissipation (Max) :
- 1250W (Tc)
- Qualification :
- -
- Product Status :
- Active
- Rad Hardened :
- No
- Packaging :
- Tube
- Published :
- 2015
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Channel Mode :
- Enhancement
- Continuous Drain Current (ID) :
- 120A
- Continuous Drain Current :
- 120(A)
- Type :
- Power MOSFET
- Series :
- --
- Continuous Drain Current Id :
- 120A
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Subcategory :
- MOSFETs
- Transistor Polarity :
- N-Channel
- Brand :
- IXYS
- Polarity :
- N
- Width :
- 21.34mm
- Mounting Style :
- Through Hole
- Channel Type :
- N Channel
- Height :
- 5.21mm
- Pin Count :
- 3 +Tab
- Operating Temp Range :
- -55C to 150C
- Maximum Operating Temperature :
- +150 °C
- Mounting Type :
- Through Hole
- Rise Time :
- 24 ns
- Manufacturer :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements per Chip :
- 1
- Base Product Number :
- IXTX120
- Package :
- Tube
- Length :
- 16.13mm
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 60A, 10V
- Drain to Source Voltage (Vdss) :
- 650V
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Tradename :
- HiPerFET
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 1250W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 25V
- Product :
- Power MOSFET Modules
- RoHS :
- Details
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXTX120N65X2
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N-Channel Tube 24m Ω @ 60A, 10V ±30V 13600pF @ 25V 240nC @ 10V 650V TO-247-3
IXTX120N65X2 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 13600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTX120N65X2 Features
a continuous drain current (ID) of 120A
a 650V drain to source voltage (Vdss)
IXTX120N65X2 Applications
There are a lot of IXYS
IXTX120N65X2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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