IXTX210P10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

3000 mJ

DS Breakdown Voltage-Min :

100V

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

740nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

210A Tc

Manufacturer :

IXYS

Series :

TrenchP™

Rise Time :

98 ns

JESD-30 Code :

R-PSIP-T3

Supplier Device Package :

PLUS247™-3

Packaging :

Tube

Number of Channels :

1 Channel

Terminal Position :

Single

Height :

21.34 mm

Product Category :

MOSFET

FET Feature :

--

Power Dissipation-Max :

1040W Tc

Continuous Drain Current (ID) :

210A

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Polarity :

P-Channel

Transistor Element Material :

SILICON

Vgs (Max) :

±15V

FET Type :

P-Channel

Type :

TrenchP Power MOSFET

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-247-3

Width :

5.21 mm

RoHS :

Details

Tradename :

TrenchP

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

800A

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

69500pF @ 25V

Mounting Type :

Through Hole

Length :

16.13 mm

Mount :

Through Hole

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Power Dissipation (Max) :

1040W (Tc)

Package :

Tube

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 105A, 10V

Brand :

IXYS

Mounting Style :

Through Hole

Product Status :

Active

Base Product Number :

IXTX210

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Published :

2012

Drain-source On Resistance-Max :

0.0075Ohm

Maximum Operating Temperature :

+ 150 C

Pin Count :

3

Factory Lead Time :

28 Weeks

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1