IXTX40P50P
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- Mfr.Part #
- IXTX40P50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 40A PLUS247-3
- Stock
- 707
- In Stock ：
- 707
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 890W Tc
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 500V
- Product Status :
- Active
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 40A
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- TIN SILVER COPPER
- Height :
- 21.34 mm
- FET Type :
- P-Channel
- DS Breakdown Voltage-Min :
- 500V
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Mounting Style :
- Through Hole
- Base Product Number :
- IXTX40
- Number of Elements :
- 1
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSIP-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 11500pF @ 25V
- Product Type :
- MOSFET
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2012
- Type :
- PolarP Power MOSFET
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Tradename :
- PolarP
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 120A
- Series :
- PolarP™
- RoHS :
- Details
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 890W (Tc)
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- PLUS247™-3
- Rise Time :
- 59 ns
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.23Ohm
- Transistor Polarity :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 20A, 10V
- Length :
- 16.13 mm
- Maximum Operating Temperature :
- + 150 C
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 205nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Manufacturer :
- IXYS
- Pin Count :
- 3
- Width :
- 5.21 mm
- Factory Lead Time :
- 28 Weeks
- Datasheets
- IXTX40P50P
IXTX40P50P Documents
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P-Channel Tube 230m Ω @ 20A, 10V ±20V 11500pF @ 25V 205nC @ 10V 500V TO-247-3
IXTX40P50P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).Peak drain current is 120A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 500V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTX40P50P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 40A
based on its rated peak drain current 120A.
a 500V drain to source voltage (Vdss)
IXTX40P50P Applications
There are a lot of IXYS
IXTX40P50P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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