IXTX20N150

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

21.34 mm

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

20A

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

DS Breakdown Voltage-Min :

1500V

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

Brand :

IXYS

JESD-30 Code :

R-PSIP-T3

Case Connection :

DRAIN

Power Dissipation-Max :

1250W Tc

Power Dissipation (Max) :

1250W (Tc)

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

50A

Product Type :

MOSFET

Number of Elements :

1

Terminal Position :

Single

RoHS :

Details

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Factory Lead Time :

28 Weeks

Rise Time :

30 ns

Supplier Device Package :

PLUS247™-3

Maximum Operating Temperature :

+ 150 C

Package / Case :

TO-247-3

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 25V

Lead Free :

Lead Free

Type :

High Voltage Power MOSFET

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1 Ω @ 10A, 10V

Width :

5.21 mm

RoHS Status :

ROHS3 Compliant

Series :

--

Current - Continuous Drain (Id) @ 25°C :

20A Tc

FET Feature :

--

Drain-source On Resistance-Max :

1Ohm

Mount :

Through Hole

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

1500V

Length :

16.13 mm

Product Category :

MOSFET

Channel Mode :

Enhancement

Package :

Tube

Base Product Number :

IXTX20

Avalanche Energy Rating (Eas) :

2500 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Status :

Active

Mounting Style :

Through Hole

Packaging :

Tube