IXTX20N150
- Mfr.Part #
- IXTX20N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 20A PLUS247-3
- Stock
- 26
- In Stock :
- 26
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-247-3
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 10A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSIP-T3
- Height :
- 21.34 mm
- Continuous Drain Current (ID) :
- 20A
- Input Capacitance (Ciss) (Max) @ Vds :
- 7800pF @ 25V
- Width :
- 5.21 mm
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- DS Breakdown Voltage-Min :
- 1500V
- FET Feature :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 1500V
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Power Dissipation (Max) :
- 1250W (Tc)
- Package :
- Tube
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXTX20
- Gate Charge (Qg) (Max) @ Vgs :
- 215nC @ 10V
- Product Category :
- MOSFET
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Rise Time :
- 30 ns
- Type :
- High Voltage Power MOSFET
- Mounting Style :
- Through Hole
- Terminal Position :
- Single
- Supplier Device Package :
- PLUS247™-3
- Channel Mode :
- Enhancement
- Series :
- --
- Number of Terminations :
- 3
- Product Type :
- MOSFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 50A
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Mounting Type :
- Through Hole
- Length :
- 16.13 mm
- Drain-source On Resistance-Max :
- 1Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 28 Weeks
- RoHS Status :
- ROHS3 Compliant
- Brand :
- IXYS
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Reach Compliance Code :
- Unknown
- Power Dissipation-Max :
- 1250W Tc
- Transistor Polarity :
- N-Channel
- Published :
- 2012
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Datasheets
- IXTX20N150
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N-Channel Tube 1 Ω @ 10A, 10V ±30V 7800pF @ 25V 215nC @ 10V 1500V TO-247-3
IXTX20N150 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 7800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTX20N150 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 50A.
a 1500V drain to source voltage (Vdss)
IXTX20N150 Applications
There are a lot of IXYS
IXTX20N150 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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