IXTX17N120L

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Mfr.Part #
IXTX17N120L
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1200V 17A PLUS247-3
Stock
1,071
In Stock :
1,071

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
63 ns
Maximum Operating Temperature :
+ 150 C
Power Dissipation-Max :
700W Tc
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max (Abs) :
700 W
Number of Pins :
3
Vgs(th) (Max) @ Id :
5V @ 250μA
JESD-30 Code :
R-PSIP-T3
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
700W (Tc)
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
2500 mJ
Drive Voltage (Max Rds On,Min Rds On) :
20V
Published :
2010
Pbfree Code :
yes
Length :
16.13 mm
Width :
5.21 mm
RoHS :
Details
Transistor Application :
SWITCHING
Packaging :
Tube
Mounting Type :
Through Hole
Vgs (Max) :
±30V
Number of Terminations :
3
Product Category :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
1.2kV
Terminal Finish :
TIN SILVER COPPER
Channel Mode :
Enhancement
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 15V
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
8300pF @ 25V
Additional Feature :
AVALANCHE RATED
Product Status :
Active
Transistor Type :
1 N-Channel
Manufacturer :
IXYS
Drain to Source Voltage (Vdss) :
1200V
Continuous Drain Current (ID) :
17A
Base Product Number :
IXTX17
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e1
Brand :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
39ns
Current - Continuous Drain (Id) @ 25°C :
17A Tc
Mounting Style :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
34 A
Package / Case :
TO-247-3
Transistor Polarity :
N-Channel
Configuration :
Single
Drain Current-Max (Abs) (ID) :
17 A
FET Feature :
--
Mount :
Through Hole
Drain-source On Resistance-Max :
0.9Ohm
Series :
--
Number of Terminals :
3
Height :
21.34 mm
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
900m Ω @ 8.5A, 20V
Element Configuration :
Single
Package :
Tube
Turn-Off Delay Time :
75 ns
Pin Count :
3
Surface Mount :
No
Reach Compliance Code :
Unknown
Minimum Operating Temperature :
- 55 C
Factory Lead Time :
24 Weeks
Product Type :
MOSFET
Power Dissipation :
700W
Supplier Device Package :
PLUS247™-3
Qualification Status :
Not Qualified
Number of Channels :
1 Channel
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
DS Breakdown Voltage-Min :
1200 V
Datasheets
IXTX17N120L
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTX17N120L from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXTX17N120L pinout, IXTX17N120L datasheet PDF, IXTX17N120L amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTX17N120L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTX17N120L


N-Channel Tube 900m Ω @ 8.5A, 20V ±30V 8300pF @ 25V 155nC @ 15V 1200V TO-247-3

IXTX17N120L Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 17A amps.In this device, the drain-source breakdown voltage is 1.2kV and VGS=1.2kV, so the drain-source breakdown voltage is 1.2kV in this case.A device can conduct a maximum continuous current of [17 A] according to its drain current.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 34 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 1200 V to maintain normal operation.To operate this transistor, you will need a 1200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (20V).

IXTX17N120L Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 34 A.
a 1200V drain to source voltage (Vdss)


IXTX17N120L Applications


There are a lot of IXYS
IXTX17N120L applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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