IXTX17N120L
- Mfr.Part #
- IXTX17N120L
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 17A PLUS247-3
- Stock
- 1,071
- In Stock :
- 1,071
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 63 ns
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation-Max :
- 700W Tc
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max (Abs) :
- 700 W
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- JESD-30 Code :
- R-PSIP-T3
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 700W (Tc)
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Published :
- 2010
- Pbfree Code :
- yes
- Length :
- 16.13 mm
- Width :
- 5.21 mm
- RoHS :
- Details
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 1.2kV
- Terminal Finish :
- TIN SILVER COPPER
- Channel Mode :
- Enhancement
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 15V
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 8300pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Product Status :
- Active
- Transistor Type :
- 1 N-Channel
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 1200V
- Continuous Drain Current (ID) :
- 17A
- Base Product Number :
- IXTX17
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 39ns
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Mounting Style :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 34 A
- Package / Case :
- TO-247-3
- Transistor Polarity :
- N-Channel
- Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 17 A
- FET Feature :
- --
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.9Ohm
- Series :
- --
- Number of Terminals :
- 3
- Height :
- 21.34 mm
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 8.5A, 20V
- Element Configuration :
- Single
- Package :
- Tube
- Turn-Off Delay Time :
- 75 ns
- Pin Count :
- 3
- Surface Mount :
- No
- Reach Compliance Code :
- Unknown
- Minimum Operating Temperature :
- - 55 C
- Factory Lead Time :
- 24 Weeks
- Product Type :
- MOSFET
- Power Dissipation :
- 700W
- Supplier Device Package :
- PLUS247™-3
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 1200 V
- Datasheets
- IXTX17N120L
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N-Channel Tube 900m Ω @ 8.5A, 20V ±30V 8300pF @ 25V 155nC @ 15V 1200V TO-247-3
IXTX17N120L Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 17A amps.In this device, the drain-source breakdown voltage is 1.2kV and VGS=1.2kV, so the drain-source breakdown voltage is 1.2kV in this case.A device can conduct a maximum continuous current of [17 A] according to its drain current.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 34 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 1200 V to maintain normal operation.To operate this transistor, you will need a 1200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (20V).
IXTX17N120L Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 34 A.
a 1200V drain to source voltage (Vdss)
IXTX17N120L Applications
There are a lot of IXYS
IXTX17N120L applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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