IXTX17N120L

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Status :

Active

Continuous Drain Current (ID) :

17A

Brand :

IXYS

Additional Feature :

AVALANCHE RATED

Product Category :

MOSFET

Terminal Finish :

TIN SILVER COPPER

Drive Voltage (Max Rds On,Min Rds On) :

20V

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

1200V

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Reach Compliance Code :

Unknown

Supplier Device Package :

PLUS247™-3

Series :

--

Width :

5.21 mm

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

75 ns

JESD-609 Code :

e1

Vgs (Max) :

±30V

JESD-30 Code :

R-PSIP-T3

Height :

21.34 mm

DS Breakdown Voltage-Min :

1200 V

FET Feature :

--

Mount :

Through Hole

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max (Abs) :

700 W

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 15V

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

900m Ω @ 8.5A, 20V

Power Dissipation :

700W

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Package Shape :

RECTANGULAR

Base Product Number :

IXTX17

FET Type :

N-Channel

Mounting Type :

Through Hole

Factory Lead Time :

24 Weeks

Number of Terminations :

3

Number of Terminals :

3

Number of Elements :

1

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

17 A

Pulsed Drain Current-Max (IDM) :

34 A

Package :

Tube

Mounting Style :

Through Hole

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

2500 mJ

Power Dissipation-Max :

700W Tc

Transistor Type :

1 N-Channel

Polarity/Channel Type :

N-Channel

Configuration :

Single

Fall Time (Typ) :

63 ns

Transistor Polarity :

N-Channel

Drain-source On Resistance-Max :

0.9Ohm

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Operating Mode :

ENHANCEMENT MODE

Rise Time :

39ns

Length :

16.13 mm

Qualification Status :

Not Qualified

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

8300pF @ 25V

Number of Channels :

1 Channel

Package / Case :

TO-247-3

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Transistor Element Material :

SILICON

Packaging :

Tube

Drain to Source Breakdown Voltage :

1.2kV

Pin Count :

3

Power Dissipation (Max) :

700W (Tc)

Transistor Application :

SWITCHING