IXTX110N20L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

Package :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Rise Time :

100 ns

Tradename :

Linear L2

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Type :

N-Channel

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Published :

2009

Drain Current-Max (Abs) (ID) :

110 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Lead Free :

Lead Free

RoHS :

Details

Terminal Position :

Single

Number of Channels :

1 Channel

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

275A

Length :

16.13 mm

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max :

960W Tc

Factory Lead Time :

28 Weeks

Drain-source On Resistance-Max :

0.024Ohm

Number of Terminals :

3

Case Connection :

DRAIN

Number of Elements :

1

Height :

21.34 mm

DS Breakdown Voltage-Min :

200V

Mount :

Through Hole

Minimum Operating Temperature :

- 55 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

Through Hole

Avalanche Energy Rating (Eas) :

5000 mJ

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Series :

Linear L2™

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

24m Ω @ 55A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

PLUS247™-3

Power Dissipation-Max (Abs) :

960 W

Type :

LinearL2 Power MOSFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

500nC @ 10V

Pin Count :

3

Number of Terminations :

3

Product Status :

Active

Package / Case :

TO-247-3

Number of Pins :

3

JESD-609 Code :

e1

Mounting Type :

Through Hole

Width :

5.21 mm

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

200V

Qualification Status :

Not Qualified

Surface Mount :

No

Base Product Number :

IXTX110

Power Dissipation (Max) :

960W (Tc)

Brand :

IXYS

Reach Compliance Code :

Compliant

Package Shape :

RECTANGULAR

Manufacturer :

IXYS

Continuous Drain Current (ID) :

110A

FET Feature :

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