IXTX5N250

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Mfr.Part #
IXTX5N250
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 2500V 5A PLUS247-3
Stock
15
In Stock :
15

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Published :
2010
Maximum Operating Temperature :
+ 150 C
Max Operating Temperature :
150 °C
DS Breakdown Voltage-Min :
2500 V
Channel Mode :
Enhancement
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
20A
Continuous Drain Current (ID) :
5A
Terminal Position :
Single
Packaging :
Tube
Supplier Device Package :
PLUS247™-3
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Rds On Max :
8.8 Ω
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
5A
Package / Case :
TO-247-3
FET Type :
N-Channel
Turn-Off Delay Time :
90 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
5V
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Reach Compliance Code :
Compliant
Terminal Form :
THROUGH-HOLE
Rds On (Max) @ Id, Vgs :
8.8 Ω @ 2.5A, 10V
Mount :
Through Hole
Product Category :
MOSFET
Power Dissipation-Max (Abs) :
960 W
Element Configuration :
Single
Power Dissipation-Max :
960W Tc
Configuration :
Single
Drain-source On Resistance-Max :
8.8 Ω
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Min Operating Temperature :
-55 °C
Rise Time :
20ns
Number of Pins :
3
Drain to Source Breakdown Voltage :
2.5kV
Input Capacitance :
8.56 nF
Brand :
IXYS
Drain to Source Voltage (Vdss) :
2500V
Input Capacitance (Ciss) (Max) @ Vds :
8560pF @ 25V
Vgs (Max) :
±30V
Number of Terminations :
3
Mounting Style :
Through Hole
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
960W (Tc)
Series :
--
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Type :
1 N-Channel
Power Dissipation :
960W
Product Status :
Active
Fall Time (Typ) :
44 ns
Product Type :
MOSFET
JESD-30 Code :
R-PSIP-T3
Manufacturer :
IXYS
Transistor Polarity :
N-Channel
Base Product Number :
IXTX5
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Pin Count :
3
Qualification Status :
Not Qualified
Factory Lead Time :
28 Weeks
Number of Terminals :
3
Drain to Source Resistance :
8.8 Ω
Number of Elements :
1
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 1mA
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
2500 mJ
Max Power Dissipation :
960 W
Minimum Operating Temperature :
- 55 C
RoHS :
Details
Datasheets
IXTX5N250
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTX5N250 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, IXTX5N250 pinout, IXTX5N250 datasheet PDF, IXTX5N250 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTX5N250 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTX5N250


N-Channel Tube 8.8 Ω @ 2.5A, 10V ±30V 8560pF @ 25V 200nC @ 10V 2500V TO-247-3

IXTX5N250 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2500 mJ.A device's maximal input capacitance is 8560pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 2.5kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 90 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 20A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 8.8 Ω.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 5V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 2500 V.This transistor requires a 2500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTX5N250 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 2.5kV voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 20A.
single MOSFETs transistor is 8.8 Ω
a 2500V drain to source voltage (Vdss)


IXTX5N250 Applications


There are a lot of IXYS
IXTX5N250 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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