IXTX5N250
- Mfr.Part #
- IXTX5N250
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 2500V 5A PLUS247-3
- Stock
- 15
- In Stock :
- 15
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Published :
- 2010
- Maximum Operating Temperature :
- + 150 C
- Max Operating Temperature :
- 150 °C
- DS Breakdown Voltage-Min :
- 2500 V
- Channel Mode :
- Enhancement
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 20A
- Continuous Drain Current (ID) :
- 5A
- Terminal Position :
- Single
- Packaging :
- Tube
- Supplier Device Package :
- PLUS247™-3
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Rds On Max :
- 8.8 Ω
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 5A
- Package / Case :
- TO-247-3
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 90 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Reach Compliance Code :
- Compliant
- Terminal Form :
- THROUGH-HOLE
- Rds On (Max) @ Id, Vgs :
- 8.8 Ω @ 2.5A, 10V
- Mount :
- Through Hole
- Product Category :
- MOSFET
- Power Dissipation-Max (Abs) :
- 960 W
- Element Configuration :
- Single
- Power Dissipation-Max :
- 960W Tc
- Configuration :
- Single
- Drain-source On Resistance-Max :
- 8.8 Ω
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Min Operating Temperature :
- -55 °C
- Rise Time :
- 20ns
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 2.5kV
- Input Capacitance :
- 8.56 nF
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 2500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8560pF @ 25V
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Mounting Style :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 960W (Tc)
- Series :
- --
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Type :
- 1 N-Channel
- Power Dissipation :
- 960W
- Product Status :
- Active
- Fall Time (Typ) :
- 44 ns
- Product Type :
- MOSFET
- JESD-30 Code :
- R-PSIP-T3
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXTX5
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 28 Weeks
- Number of Terminals :
- 3
- Drain to Source Resistance :
- 8.8 Ω
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Max Power Dissipation :
- 960 W
- Minimum Operating Temperature :
- - 55 C
- RoHS :
- Details
- Datasheets
- IXTX5N250
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N-Channel Tube 8.8 Ω @ 2.5A, 10V ±30V 8560pF @ 25V 200nC @ 10V 2500V TO-247-3
IXTX5N250 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2500 mJ.A device's maximal input capacitance is 8560pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 2.5kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 90 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 20A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 8.8 Ω.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 5V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 2500 V.This transistor requires a 2500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTX5N250 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 2.5kV voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 20A.
single MOSFETs transistor is 8.8 Ω
a 2500V drain to source voltage (Vdss)
IXTX5N250 Applications
There are a lot of IXYS
IXTX5N250 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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