IXTX550N055T2
- Mfr.Part #
- IXTX550N055T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 550A PLUS247-3
- Stock
- 46,326
- In Stock :
- 46,326
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Maximum Operating Temperature :
- + 175 C
- Factory Lead Time :
- 28 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 595nC @ 10V
- Rise Time :
- 40ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 40000pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 90 ns
- Published :
- 2009
- Reach Compliance Code :
- Unknown
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Brand :
- IXYS
- Power Dissipation (Max) :
- 1250W (Tc)
- Terminal Finish :
- TIN SILVER COPPER
- Packaging :
- Tube
- Package :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 55V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Drain-source On Resistance-Max :
- 0.0016 Ω
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSIP-T3
- Case Connection :
- DRAIN
- Supplier Device Package :
- PLUS247™-3
- Tradename :
- HiPerFET
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Output Current :
- 550A
- DS Breakdown Voltage-Min :
- 55 V
- RoHS :
- Details
- Product Status :
- Active
- Surface Mount :
- No
- Nominal Supply Current :
- 200A
- Qualification Status :
- Not Qualified
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max (Abs) :
- 1250 W
- Product :
- MOSFET Gate Drivers
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 100A, 10V
- Fall Time (Typ) :
- 230 ns
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 1250W Tc
- Number of Drivers :
- 1
- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- Number of Pins :
- 247
- Current - Continuous Drain (Id) @ 25°C :
- 550A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- FRFET®, SupreMOS®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e1
- Product Type :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXTX550
- Transistor Element Material :
- SILICON
- Terminal Form :
- THROUGH-HOLE
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 550A
- Output Voltage :
- 55V
- Turn On Delay Time :
- 45 ns
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 1375 A
- Number of Terminals :
- 3
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 550 A
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- IXTX550N055T2
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N-Channel Tube 1.6m Ω @ 100A, 10V ±20V 40000pF @ 25V 595nC @ 10V 55V TO-247-3
IXTX550N055T2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 40000pF @ 25V.This device has a continuous drain current (ID) of [550A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 550 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 90 ns.A maximum pulsed drain current of 1375 A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 45 ns.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 55 V.In order to operate this transistor, a voltage of 55V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTX550N055T2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 550A
the turn-off delay time is 90 ns
based on its rated peak drain current 1375 A.
a 55V drain to source voltage (Vdss)
IXTX550N055T2 Applications
There are a lot of IXYS
IXTX550N055T2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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