IXTX46N50L

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Mfr.Part #
IXTX46N50L
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 46A PLUS247-3
Stock
46,093
In Stock :
46,093

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
1 N-Channel
Terminal Finish :
TIN SILVER COPPER
Terminal Position :
Single
Published :
2007
Avalanche Energy Rating (Eas) :
1500 mJ
Rds On (Max) @ Id, Vgs :
160m Ω @ 500mA, 20V
Channel Mode :
Enhancement
Number of Terminals :
3
Terminal Form :
THROUGH-HOLE
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 15V
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.16 Ω
Product Category :
MOSFET
Product Type :
MOSFET
Case Connection :
DRAIN
Configuration :
Single
Base Product Number :
IXTX46
JESD-609 Code :
e1
Number of Channels :
1 Channel
Product Status :
Active
Drain to Source Voltage (Vdss) :
500V
Maximum Operating Temperature :
+ 150 C
Rise Time :
50ns
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
20V
Fall Time (Typ) :
42 ns
RoHS :
Details
Vgs (Max) :
±30V
Pin Count :
3
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Package :
Tube
Power Dissipation :
700W
Radiation Hardening :
No
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
Width :
5.21 mm
Gate to Source Voltage (Vgs) :
30V
Lead Free :
Lead Free
Power Dissipation-Max :
700W Tc
Packaging :
Tube
Mounting Style :
Through Hole
Length :
16.13 mm
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
500V
Current - Continuous Drain (Id) @ 25°C :
46A Tc
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Package / Case :
TO-247-3
Height :
21.34 mm
Pulsed Drain Current-Max (IDM) :
100 A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Series :
--
Number of Elements :
1
Vgs(th) (Max) @ Id :
6V @ 250μA
FET Type :
N-Channel
JESD-30 Code :
R-PSIP-T3
Operating Mode :
ENHANCEMENT MODE
Manufacturer :
IXYS
Supplier Device Package :
PLUS247™-3
Surface Mount :
No
Type :
Linear Power MOSFET
Turn-Off Delay Time :
80 ns
FET Feature :
--
Number of Pins :
3
Continuous Drain Current (ID) :
46A
Power Dissipation-Max (Abs) :
700 W
Resistance :
160mOhm
RoHS Status :
ROHS3 Compliant
Brand :
IXYS
Power Dissipation (Max) :
700W (Tc)
Number of Terminations :
3
Mount :
Through Hole
Drain Current-Max (Abs) (ID) :
46 A
Pbfree Code :
yes
DS Breakdown Voltage-Min :
500 V
Additional Feature :
AVALANCHE RATED
Factory Lead Time :
24 Weeks
Datasheets
IXTX46N50L
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTX46N50L from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Type:Linear Power MOSFET, Number of Pins:3, Number of Terminations:3, IXTX46N50L pinout, IXTX46N50L datasheet PDF, IXTX46N50L amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTX46N50L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTX46N50L


N-Channel Tube 160m Ω @ 500mA, 20V ±30V 7000pF @ 25V 260nC @ 15V 500V TO-247-3

IXTX46N50L Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 46A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 46 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 100 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (20V), this device contributes to a reduction in overall power consumption.

IXTX46N50L Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 100 A.
a 500V drain to source voltage (Vdss)


IXTX46N50L Applications


There are a lot of IXYS
IXTX46N50L applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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