IXTX46N50L
- Mfr.Part #
- IXTX46N50L
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 46A PLUS247-3
- Stock
- 46,093
- In Stock :
- 46,093
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- 1 N-Channel
- Terminal Finish :
- TIN SILVER COPPER
- Terminal Position :
- Single
- Published :
- 2007
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 500mA, 20V
- Channel Mode :
- Enhancement
- Number of Terminals :
- 3
- Terminal Form :
- THROUGH-HOLE
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 15V
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 0.16 Ω
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- Configuration :
- Single
- Base Product Number :
- IXTX46
- JESD-609 Code :
- e1
- Number of Channels :
- 1 Channel
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 500V
- Maximum Operating Temperature :
- + 150 C
- Rise Time :
- 50ns
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Fall Time (Typ) :
- 42 ns
- RoHS :
- Details
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Power Dissipation :
- 700W
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Width :
- 5.21 mm
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 700W Tc
- Packaging :
- Tube
- Mounting Style :
- Through Hole
- Length :
- 16.13 mm
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3
- Height :
- 21.34 mm
- Pulsed Drain Current-Max (IDM) :
- 100 A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- --
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 6V @ 250μA
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS
- Supplier Device Package :
- PLUS247™-3
- Surface Mount :
- No
- Type :
- Linear Power MOSFET
- Turn-Off Delay Time :
- 80 ns
- FET Feature :
- --
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 46A
- Power Dissipation-Max (Abs) :
- 700 W
- Resistance :
- 160mOhm
- RoHS Status :
- ROHS3 Compliant
- Brand :
- IXYS
- Power Dissipation (Max) :
- 700W (Tc)
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 46 A
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 500 V
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 24 Weeks
- Datasheets
- IXTX46N50L
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N-Channel Tube 160m Ω @ 500mA, 20V ±30V 7000pF @ 25V 260nC @ 15V 500V TO-247-3
IXTX46N50L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 46A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 46 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 100 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (20V), this device contributes to a reduction in overall power consumption.
IXTX46N50L Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 100 A.
a 500V drain to source voltage (Vdss)
IXTX46N50L Applications
There are a lot of IXYS
IXTX46N50L applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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