IXTX46N50L

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXTX46

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Pin Count :

3

DS Breakdown Voltage-Min :

500 V

Surface Mount :

No

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

RoHS :

Details

Product Status :

Active

Package Shape :

RECTANGULAR

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

46 A

Mount :

Through Hole

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 15V

Drain to Source Voltage (Vdss) :

500V

Fall Time (Typ) :

42 ns

Transistor Application :

SWITCHING

Package / Case :

TO-247-3

Drive Voltage (Max Rds On,Min Rds On) :

20V

Avalanche Energy Rating (Eas) :

1500 mJ

Radiation Hardening :

No

Factory Lead Time :

24 Weeks

Product Category :

MOSFET

Product Type :

MOSFET

Power Dissipation-Max :

700W Tc

Packaging :

Tube

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

160m Ω @ 500mA, 20V

Manufacturer :

IXYS

Number of Pins :

3

Package :

Tube

Channel Mode :

Enhancement

FET Feature :

--

JESD-30 Code :

R-PSIP-T3

Rise Time :

50ns

Number of Terminations :

3

Published :

2007

Maximum Operating Temperature :

+ 150 C

Configuration :

Single

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

6V @ 250μA

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Reach Compliance Code :

Compliant

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

80 ns

Gate to Source Voltage (Vgs) :

30V

Series :

--

Vgs (Max) :

±30V

Terminal Finish :

TIN SILVER COPPER

Length :

16.13 mm

Height :

21.34 mm

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

Number of Terminals :

3

Continuous Drain Current (ID) :

46A

Resistance :

160mOhm

Width :

5.21 mm

Supplier Device Package :

PLUS247™-3

Element Configuration :

Single

Mounting Style :

Through Hole

Power Dissipation :

700W

Transistor Polarity :

N-Channel

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

100 A

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

500V

Power Dissipation-Max (Abs) :

700 W

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

Drain-source On Resistance-Max :

0.16 Ω

FET Type :

N-Channel

Power Dissipation (Max) :

700W (Tc)

Type :

Linear Power MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V