IXTM67N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Package Shape :

Round

Published :

2003

Package :

Tube

Power Dissipation-Max (Abs) :

250 W

DS Breakdown Voltage-Min :

100V

Terminal Form :

PIN/PEG

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Manufacturer :

IXYS Corporation

Number of Terminations :

2

JEDEC-95 Code :

TO-204AE

Power Dissipation Ambient-Max :

300 W

Pin Count :

2

Transistor Application :

SWITCHING

Series :

GigaMOS™

Product Status :

Obsolete

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Pbfree Code :

yes

Number of Terminals :

2

Rds On (Max) @ Id, Vgs :

25m Ω @ 33.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXTM67

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation (Max) :

300W (Tc)

Qualification Status :

Not Qualified

Power Dissipation-Max :

300W Tc

Package / Case :

TO-204AE

Supplier Device Package :

TO-204AE

Pulsed Drain Current-Max (IDM) :

268A

JESD-30 Code :

O-MBFM-P2

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.025Ohm

Packaging :

Tube

Reach Compliance Code :

Compliant

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 4mA

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

67A

Number of Elements :

1

Surface Mount :

No

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

67A Tc