IXTM67N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Base Product Number :

IXTM67

Terminal Form :

PIN/PEG

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

JEDEC-95 Code :

TO-204AE

Drain-source On Resistance-Max :

0.025Ohm

Rds On (Max) @ Id, Vgs :

25m Ω @ 33.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

250 W

Manufacturer :

IXYS Corporation

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

FET Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Obsolete

JESD-30 Code :

O-MBFM-P2

Number of Terminals :

2

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Transistor Element Material :

SILICON

Series :

GigaMOS™

Drain Current-Max (Abs) (ID) :

67A

Case Connection :

DRAIN

Supplier Device Package :

TO-204AE

Pin Count :

2

Power Dissipation (Max) :

300W (Tc)

Published :

2003

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 4mA

Surface Mount :

No

FET Feature :

--

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Package Shape :

Round

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

100V

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Tube

Power Dissipation Ambient-Max :

300 W

Terminal Position :

BOTTOM

Power Dissipation-Max :

300W Tc

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

268A

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-204AE

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel