IXTM40N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

300W (Tc)

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Package Shape :

Round

Case Connection :

DRAIN

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Manufacturer :

IXYS Corporation

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

250 W

Rds On (Max) @ Id, Vgs :

88m Ω @ 20A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

160A

Published :

2012

Series :

GigaMOS™

Package / Case :

TO-204AE

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

300V

JEDEC-95 Code :

TO-204AE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

300V

Drain Current-Max (Abs) (ID) :

40A

Power Dissipation-Max :

300W Tc

Supplier Device Package :

TO-204AE

Drain-source On Resistance-Max :

0.088Ohm

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Status :

Obsolete

FET Feature :

--

Number of Terminations :

2

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation Ambient-Max :

300 W

Base Product Number :

IXTM40

Terminal Form :

PIN/PEG

Pin Count :

2

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

JESD-30 Code :

O-MBFM-P2

Vgs (Max) :

±20V

Mounting Type :

Through Hole