IXTM12N100
- Mfr.Part #
- IXTM12N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12A TO204AA
- Stock
- 20,117
- In Stock :
- 20,117
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- PIN/PEG
- Drain Current-Max (Abs) (ID) :
- 12A
- Power Dissipation-Max :
- 300W Tc
- JEDEC-95 Code :
- TO-204AA
- Package / Case :
- TO-204AA, TO-3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation Ambient-Max :
- 300 W
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Manufacturer :
- IXYS Corporation
- Power Dissipation (Max) :
- 300W (Tc)
- Product Status :
- Obsolete
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 2
- JESD-30 Code :
- O-MBFM-P2
- Package Shape :
- Round
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Drain-source On Resistance-Max :
- 1.05 Ω
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- BOTTOM
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- IXTM12
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 1.05 Ω @ 6A, 10V
- Pin Count :
- 2
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- TO-204AA
- Drain to Source Voltage (Vdss) :
- 1000V
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Series :
- GigaMOS™
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Power Dissipation-Max (Abs) :
- 300 W
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 1000V
- Pulsed Drain Current-Max (IDM) :
- 48A
- Datasheets
- IXTM12N100
N-Channel Tube 1.05 Ω @ 6A, 10V ±20V 4000pF @ 25V 170nC @ 10V 1000V TO-204AA, TO-3
IXTM12N100 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4000pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 12A.A maximum pulsed drain current of 48A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTM12N100 Features
based on its rated peak drain current 48A.
a 1000V drain to source voltage (Vdss)
IXTM12N100 Applications
There are a lot of IXYS
IXTM12N100 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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