IXTM5N100
- Mfr.Part #
- IXTM5N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 5A TO204AA
- Stock
- 20,536
- In Stock :
- 20,536
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Power Dissipation-Max (Abs) :
- 150 W
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-204AA, TO-3
- Continuous Drain Current (ID) :
- 5A
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Terminal Form :
- PIN/PEG
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-204AA
- Number of Terminals :
- 2
- Supplier Device Package :
- TO-204AA
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 180W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- BOTTOM
- Package Shape :
- Round
- DS Breakdown Voltage-Min :
- 1000V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 2
- JESD-30 Code :
- O-MBFM-P2
- Power Dissipation-Max :
- 180W Tc
- Rds On (Max) @ Id, Vgs :
- 2.4 Ω @ 2.5A, 10V
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 2.4 Ω
- Mount :
- Through Hole
- Power Dissipation Ambient-Max :
- 180 W
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Pin Count :
- 2
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 1000V
- Number of Elements :
- 1
- Manufacturer :
- IXYS Corporation
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Obsolete
- Pulsed Drain Current-Max (IDM) :
- 20A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 5A
- FET Type :
- N-Channel
- Series :
- --
- Base Product Number :
- IXTM5
- Datasheets
- IXTM5N100
N-Channel Tube 2.4 Ω @ 2.5A, 10V ±20V 2600pF @ 25V 130nC @ 10V 1000V TO-204AA, TO-3
IXTM5N100 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Peak drain current is 20A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTM5N100 Features
a continuous drain current (ID) of 5A
based on its rated peak drain current 20A.
a 1000V drain to source voltage (Vdss)
IXTM5N100 Applications
There are a lot of IXYS
IXTM5N100 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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