IXTM5N100
- Mfr.Part #
- IXTM5N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 5A TO204AA
- Stock
- 20,536
- In Stock :
- 20,536
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain Current-Max (Abs) (ID) :
- 5A
- Pin Count :
- 2
- Transistor Application :
- SWITCHING
- Package Shape :
- Round
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 20A
- JESD-30 Code :
- O-MBFM-P2
- Product Status :
- Obsolete
- Series :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXTM5
- Manufacturer :
- IXYS Corporation
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Drain-source On Resistance-Max :
- 2.4 Ω
- Power Dissipation Ambient-Max :
- 180 W
- Surface Mount :
- No
- Drain to Source Voltage (Vdss) :
- 1000V
- Power Dissipation (Max) :
- 180W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 5A
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Supplier Device Package :
- TO-204AA
- Number of Terminations :
- 2
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 2.4 Ω @ 2.5A, 10V
- Package :
- Tube
- Reach Compliance Code :
- Unknown
- Mount :
- Through Hole
- Terminal Form :
- PIN/PEG
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 180W Tc
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 1000V
- Package / Case :
- TO-204AA, TO-3
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Power Dissipation-Max (Abs) :
- 150 W
- JEDEC-95 Code :
- TO-204AA
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Terminal Position :
- BOTTOM
- Datasheets
- IXTM5N100
N-Channel Tube 2.4 Ω @ 2.5A, 10V ±20V 2600pF @ 25V 130nC @ 10V 1000V TO-204AA, TO-3
IXTM5N100 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Peak drain current is 20A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTM5N100 Features
a continuous drain current (ID) of 5A
based on its rated peak drain current 20A.
a 1000V drain to source voltage (Vdss)
IXTM5N100 Applications
There are a lot of IXYS
IXTM5N100 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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