IXTM50N20

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Mfr.Part #
IXTM50N20
Manufacturer
Littelfuse
Package / Case
TO-204AE
Datasheet
Download
Description
MOSFET N-CH 200V 50A TO204AE
Stock
21,151
In Stock :
21,151

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS Corporation
Number of Terminations :
2
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
Case Connection :
DRAIN
Base Product Number :
IXTM50
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Voltage (Vdss) :
200V
Reach Compliance Code :
Compliant
Pulsed Drain Current-Max (IDM) :
200A
Package / Case :
TO-204AE
Power Dissipation-Max (Abs) :
250 W
Package Shape :
Round
Published :
2012
Terminal Position :
BOTTOM
Qualification Status :
Not Qualified
Number of Terminals :
2
Rds On (Max) @ Id, Vgs :
45m Ω @ 25A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
O-MBFM-P2
Mounting Type :
Through Hole
Product Status :
Obsolete
Pin Count :
2
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Package :
Tube
Series :
GigaMOS™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-204AE
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Terminal Form :
PIN/PEG
DS Breakdown Voltage-Min :
200V
Drain Current-Max (Abs) (ID) :
50A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
TO-204AE
Operating Mode :
ENHANCEMENT MODE
Power Dissipation Ambient-Max :
300 W
Drain-source On Resistance-Max :
0.045Ohm
Power Dissipation-Max :
300W Tc
Vgs (Max) :
±20V
Pbfree Code :
yes
Power Dissipation (Max) :
300W (Tc)
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
ECCN Code :
EAR99
Datasheets
IXTM50N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTM50N20 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-204AE, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXTM50N20 pinout, IXTM50N20 datasheet PDF, IXTM50N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTM50N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 45m Ω @ 25A, 10V ±20V 4600pF @ 25V 220nC @ 10V 200V TO-204AE

IXTM50N20 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4600pF @ 25V.50A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 200A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTM50N20 Features


based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)


IXTM50N20 Applications


There are a lot of IXYS
IXTM50N20 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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