IXTM5N100A

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Package Shape :

Round

Transistor Element Material :

SILICON

Pin Count :

2

Mounting Type :

Through Hole

Power Dissipation Ambient-Max :

180 W

Case Connection :

DRAIN

Base Product Number :

IXTM5

Drain-source On Resistance-Max :

2Ohm

JESD-30 Code :

O-MBFM-P2

Manufacturer :

IXYS Corporation

Power Dissipation-Max :

180W Tc

Terminal Form :

PIN/PEG

Supplier Device Package :

TO-204AA

Terminal Position :

BOTTOM

Power Dissipation (Max) :

180W (Tc)

Rds On (Max) @ Id, Vgs :

2 Ω @ 2.5A, 10V

Number of Terminals :

2

Factory Lead Time :

35 Weeks

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation :

180W

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

150 W

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Operating Temperature :

-55°C~150°C TJ

FET Feature :

--

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Package / Case :

TO-204AA, TO-3

JEDEC-95 Code :

TO-204AA

Packaging :

Tube

Surface Mount :

No

Package :

Tube

Series :

--

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

5A

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

20A

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Radiation Hardening :

No

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

1000V

DS Breakdown Voltage-Min :

1000 V

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Mount :

Through Hole

Product Status :

Obsolete

Drain Current-Max (Abs) (ID) :

5A

Published :

2000

Pbfree Code :

yes