IXTM5N100A

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Transistor Application :

SWITCHING

Supplier Device Package :

TO-204AA

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

O-MBFM-P2

Transistor Element Material :

SILICON

Packaging :

Tube

Drain-source On Resistance-Max :

2Ohm

Rds On (Max) @ Id, Vgs :

2 Ω @ 2.5A, 10V

Vgs (Max) :

±20V

Terminal Form :

PIN/PEG

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Package :

Tube

Factory Lead Time :

35 Weeks

Product Status :

Obsolete

JEDEC-95 Code :

TO-204AA

Drain to Source Voltage (Vdss) :

1000V

FET Feature :

--

Power Dissipation (Max) :

180W (Tc)

Power Dissipation Ambient-Max :

180 W

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Base Product Number :

IXTM5

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

1000 V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

FET Type :

N-Channel

Manufacturer :

IXYS Corporation

Series :

--

Pbfree Code :

yes

Power Dissipation-Max :

180W Tc

Continuous Drain Current (ID) :

5A

Number of Terminals :

2

Number of Elements :

1

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

5A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

20A

Published :

2000

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

180W

Pin Count :

2

Mounting Type :

Through Hole

Surface Mount :

No

Package Shape :

Round

Radiation Hardening :

No

Terminal Position :

BOTTOM

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

Compliant

Package / Case :

TO-204AA, TO-3

Power Dissipation-Max (Abs) :

150 W