IXTM5N100A
- Mfr.Part #
- IXTM5N100A
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 5A TO204AA
- Stock
- 20,939
- In Stock :
- 20,939
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS Corporation
- Package :
- Tube
- Terminal Position :
- BOTTOM
- Reach Compliance Code :
- Compliant
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 5A
- Package / Case :
- TO-204AA, TO-3
- Pin Count :
- 2
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- IXTM5
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- TO-204AA
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 1000V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 1000 V
- Power Dissipation (Max) :
- 180W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation Ambient-Max :
- 180 W
- Package Shape :
- Round
- Series :
- --
- Radiation Hardening :
- No
- JESD-30 Code :
- O-MBFM-P2
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 20A
- Power Dissipation-Max (Abs) :
- 150 W
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Power Dissipation-Max :
- 180W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Published :
- 2000
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-204AA
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 2.5A, 10V
- Terminal Form :
- PIN/PEG
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 180W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 2
- Drain-source On Resistance-Max :
- 2Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 5A
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 35 Weeks
- Product Status :
- Obsolete
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Datasheets
- IXTM5N100A
N-Channel Tube 2 Ω @ 2.5A, 10V ±20V 2600pF @ 25V 130nC @ 10V 1000V TO-204AA, TO-3
IXTM5N100A Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 5A.There is a peak drain current of 20A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTM5N100A Features
a continuous drain current (ID) of 5A
based on its rated peak drain current 20A.
a 1000V drain to source voltage (Vdss)
IXTM5N100A Applications
There are a lot of IXYS
IXTM5N100A applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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