IXTM5N100A
- Mfr.Part #
- IXTM5N100A
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 5A TO204AA
- Stock
- 20,939
- In Stock :
- 20,939
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- --
- Package / Case :
- TO-204AA, TO-3
- Case Connection :
- DRAIN
- Power Dissipation :
- 180W
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-204AA
- Mounting Type :
- Through Hole
- Published :
- 2000
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Power Dissipation Ambient-Max :
- 180 W
- Drain-source On Resistance-Max :
- 2Ohm
- Power Dissipation-Max (Abs) :
- 150 W
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Number of Pins :
- 3
- Mount :
- Through Hole
- Manufacturer :
- IXYS Corporation
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- TO-204AA
- Continuous Drain Current (ID) :
- 5A
- Power Dissipation (Max) :
- 180W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 1000V
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 5A
- Power Dissipation-Max :
- 180W Tc
- Product Status :
- Obsolete
- Qualification Status :
- Not Qualified
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 20A
- Terminal Form :
- PIN/PEG
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 2.5A, 10V
- JESD-30 Code :
- O-MBFM-P2
- Number of Terminations :
- 2
- Base Product Number :
- IXTM5
- Packaging :
- Tube
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Package Shape :
- Round
- Number of Terminals :
- 2
- DS Breakdown Voltage-Min :
- 1000 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 35 Weeks
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Datasheets
- IXTM5N100A
N-Channel Tube 2 Ω @ 2.5A, 10V ±20V 2600pF @ 25V 130nC @ 10V 1000V TO-204AA, TO-3
IXTM5N100A Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 5A.There is a peak drain current of 20A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTM5N100A Features
a continuous drain current (ID) of 5A
based on its rated peak drain current 20A.
a 1000V drain to source voltage (Vdss)
IXTM5N100A Applications
There are a lot of IXYS
IXTM5N100A applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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