IXTM11N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Base Product Number :

IXTM11

Terminal Position :

BOTTOM

Package Shape :

Round

Power Dissipation Ambient-Max :

300 W

RoHS Status :

ROHS3 Compliant

Number of Terminals :

2

Supplier Device Package :

TO-204AA

Transistor Element Material :

SILICON

Pbfree Code :

yes

Case Connection :

DRAIN

FET Type :

N-Channel

Series :

GigaMOS™

Power Dissipation (Max) :

300W (Tc)

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

11A

Pulsed Drain Current-Max (IDM) :

44A

Surface Mount :

No

Number of Terminations :

2

JEDEC-95 Code :

TO-204AA

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Product Status :

Obsolete

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Published :

2012

Power Dissipation-Max (Abs) :

250 W

Reach Compliance Code :

Compliant

Package :

Tube

Drain-source On Resistance-Max :

0.95Ohm

DS Breakdown Voltage-Min :

800V

Power Dissipation-Max :

300W Tc

Drain to Source Voltage (Vdss) :

800V

FET Feature :

--

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

950m Ω @ 5.5A, 10V

Package / Case :

TO-204AA, TO-3

Packaging :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

PIN/PEG

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

JESD-30 Code :

O-MBFM-P2

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS Corporation

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V