IXTM11N80
- Mfr.Part #
- IXTM11N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 11A TO204AA
- Stock
- 31,188
- In Stock :
- 31,188
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Product Status :
- Obsolete
- FET Feature :
- --
- Series :
- GigaMOS™
- Power Dissipation (Max) :
- 300W (Tc)
- Case Connection :
- DRAIN
- Supplier Device Package :
- TO-204AA
- Pulsed Drain Current-Max (IDM) :
- 44A
- DS Breakdown Voltage-Min :
- 800V
- Package / Case :
- TO-204AA, TO-3
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 250 W
- Power Dissipation Ambient-Max :
- 300 W
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- BOTTOM
- Package Shape :
- Round
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-204AA
- Published :
- 2012
- Manufacturer :
- IXYS Corporation
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 11A
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Reach Compliance Code :
- Compliant
- Number of Terminations :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminals :
- 2
- Drain to Source Voltage (Vdss) :
- 800V
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.95Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 5.5A, 10V
- Terminal Form :
- PIN/PEG
- Package :
- Tube
- JESD-30 Code :
- O-MBFM-P2
- FET Type :
- N-Channel
- Base Product Number :
- IXTM11
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 300W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Datasheets
- IXTM11N80
N-Channel Tube 950m Ω @ 5.5A, 10V ±20V 4500pF @ 25V 170nC @ 10V 800V TO-204AA, TO-3
IXTM11N80 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4500pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 11A.Peak drain current is 44A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTM11N80 Features
based on its rated peak drain current 44A.
a 800V drain to source voltage (Vdss)
IXTM11N80 Applications
There are a lot of IXYS
IXTM11N80 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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