IXTM11N80
- Mfr.Part #
- IXTM11N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 11A TO204AA
- Stock
- 31,188
- In Stock :
- 31,188
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Package :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- GigaMOS™
- Supplier Device Package :
- TO-204AA
- Number of Elements :
- 1
- Package / Case :
- TO-204AA, TO-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Obsolete
- Reach Compliance Code :
- Compliant
- Published :
- 2012
- Pulsed Drain Current-Max (IDM) :
- 44A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 800V
- Packaging :
- Tube
- Number of Terminals :
- 2
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.95Ohm
- Power Dissipation Ambient-Max :
- 300 W
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Package Shape :
- Round
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Case Connection :
- DRAIN
- Power Dissipation-Max (Abs) :
- 250 W
- Power Dissipation-Max :
- 300W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Base Product Number :
- IXTM11
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- O-MBFM-P2
- FET Feature :
- --
- Power Dissipation (Max) :
- 300W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-204AA
- Terminal Form :
- PIN/PEG
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Terminal Position :
- BOTTOM
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 800V
- Drain Current-Max (Abs) (ID) :
- 11A
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 5.5A, 10V
- Datasheets
- IXTM11N80
N-Channel Tube 950m Ω @ 5.5A, 10V ±20V 4500pF @ 25V 170nC @ 10V 800V TO-204AA, TO-3
IXTM11N80 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4500pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 11A.Peak drain current is 44A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTM11N80 Features
based on its rated peak drain current 44A.
a 800V drain to source voltage (Vdss)
IXTM11N80 Applications
There are a lot of IXYS
IXTM11N80 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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