IXTM11N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

44A

FET Feature :

--

Package Shape :

Round

Number of Elements :

1

Terminal Position :

BOTTOM

Number of Terminals :

2

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

11A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Package :

Tube

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

950m Ω @ 5.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Vgs (Max) :

±20V

JESD-30 Code :

O-MBFM-P2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

800V

Power Dissipation (Max) :

300W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

FET Type :

N-Channel

Transistor Application :

SWITCHING

Package / Case :

TO-204AA, TO-3

Manufacturer :

IXYS Corporation

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-204AA

JEDEC-95 Code :

TO-204AA

Polarity/Channel Type :

N-Channel

Series :

GigaMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

300W Tc

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

250 W

Published :

2012

Product Status :

Obsolete

Mounting Type :

Through Hole

Power Dissipation Ambient-Max :

300 W

Base Product Number :

IXTM11

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

PIN/PEG

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.95Ohm

Vgs(th) (Max) @ Id :

4.5V @ 250μA

DS Breakdown Voltage-Min :

800V