IXTM11N80
- Mfr.Part #
- IXTM11N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 11A TO204AA
- Stock
- 31,188
- In Stock :
- 31,188
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 800V
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 800V
- Base Product Number :
- IXTM11
- Package / Case :
- TO-204AA, TO-3
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 5.5A, 10V
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.95Ohm
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 250 W
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 44A
- JESD-30 Code :
- O-MBFM-P2
- Power Dissipation Ambient-Max :
- 300 W
- Package :
- Tube
- Number of Terminals :
- 2
- Package Shape :
- Round
- Power Dissipation (Max) :
- 300W (Tc)
- JEDEC-95 Code :
- TO-204AA
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Manufacturer :
- IXYS Corporation
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2012
- Surface Mount :
- No
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- FET Type :
- N-Channel
- Terminal Form :
- PIN/PEG
- FET Feature :
- --
- Power Dissipation-Max :
- 300W Tc
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 11A
- Supplier Device Package :
- TO-204AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- GigaMOS™
- Product Status :
- Obsolete
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Datasheets
- IXTM11N80
N-Channel Tube 950m Ω @ 5.5A, 10V ±20V 4500pF @ 25V 170nC @ 10V 800V TO-204AA, TO-3
IXTM11N80 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4500pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 11A.Peak drain current is 44A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTM11N80 Features
based on its rated peak drain current 44A.
a 800V drain to source voltage (Vdss)
IXTM11N80 Applications
There are a lot of IXYS
IXTM11N80 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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