IXTM35N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

300V

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Product Status :

Obsolete

Number of Terminals :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-204AE

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Power Dissipation Ambient-Max :

300 W

Rds On (Max) @ Id, Vgs :

100m Ω @ 17.5A, 10V

FET Feature :

--

Drain Current-Max (Abs) (ID) :

35A

Drain-source On Resistance-Max :

0.1Ohm

Number of Elements :

1

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

300W (Tc)

Number of Terminations :

2

Power Dissipation-Max (Abs) :

250 W

Power Dissipation-Max :

300W Tc

JESD-30 Code :

O-MBFM-P2

Terminal Position :

BOTTOM

DS Breakdown Voltage-Min :

300V

Terminal Form :

PIN/PEG

Packaging :

Tube

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

Round

Surface Mount :

No

Supplier Device Package :

TO-204AE

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Manufacturer :

IXYS Corporation

Package :

Tube

Package / Case :

TO-204AE

Vgs(th) (Max) @ Id :

4V @ 250µA

Base Product Number :

IXTM35

Series :

GigaMOS™

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant