IXBF40N160

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

JESD-30 Code :

R-PSIP-T3

Product Status :

Active

Switching Energy :

--

Mount :

Through Hole

Technology :

Si

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector-Emitter Voltage-Max :

1600 V

Supplier Device Package :

ISOPLUS i4-PAC™

Collector Emitter Saturation Voltage :

6.2V

Base Product Number :

IXBF40

Number of Pins :

3

Element Configuration :

Single

Power - Max :

250W

Terminal Position :

Single

Continuous Collector Current :

28 A

Width :

5.03 mm

Minimum Operating Temperature :

- 55 C

Max Collector Current :

28A

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

340 ns

Mounting Type :

Through Hole

Gate Charge :

130nC

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+ 150 C

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

POWER CONTROL

Number of Terminations :

3

Max Power Dissipation :

250W

Collector Current-Max (IC) :

28 A

Vce(on) (Max) @ Vge, Ic :

7.1V @ 15V, 20A

Reach Compliance Code :

Compliant

Turn On Delay Time :

200 ns

Packaging :

Tube

Pbfree Code :

yes

Voltage - Collector Emitter Breakdown (Max) :

1600V

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Tradename :

BIMOSFET

Factory Lead Time :

32 Weeks

Collector Emitter Breakdown Voltage :

1.6kV

Lead Free :

Lead Free

Product Category :

IGBT Transistors

Package :

Tube

Mounting Style :

Through Hole

Current - Collector (Ic) (Max) :

28A

Power Dissipation-Max (Abs) :

250 W

JESD-609 Code :

e1

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Power Dissipation :

250W

Td (on/off) @ 25°C :

--

Input Type :

Standard

Case Connection :

Isolated

Brand :

IXYS

Manufacturer :

IXYS

Package / Case :

i4-Pac™-5 (3 Leads)

Test Condition :

960V, 25A, 22 Ω, 15V

Turn-Off Delay Time :

300 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Number of Elements :

1

Number of Terminals :

3

Additional Feature :

HIGH RELIABILITY, FAST SWITCHING

Qualification Status :

Not Qualified

Turn On Time :

260 ns

Product Type :

IGBT Transistors

Length :

19.91 mm

Series :

BIMOSFET™

Gate-Emitter Thr Voltage-Max :

8V

Surface Mount :

No

Height :

20.88 mm

Collector Emitter Voltage (VCEO) :

1.6kV

IGBT Type :

--

Terminal Form :

THROUGH-HOLE

Gate-Emitter Voltage-Max :

20V

RoHS :

Details

Operating Temperature Range :

- 55 C to + 150 C