IXBF55N300

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Series :

BIMOSFET?

Package :

Tube

Polarity/Channel Type :

N-Channel

Number of Terminals :

3

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Subcategory :

IGBTs

Collector-Emitter Voltage-Max :

3000 V

JESD-30 Code :

R-PSIP-T3

Brand :

IXYS

Test Condition :

-

Product Type :

IGBT Transistors

Qualification Status :

Not Qualified

Collector Emitter Saturation Voltage :

2.7 V

Collector Current-Max (IC) :

73 A

Input Type :

Standard

Td (on/off) @ 25°C :

-

Current - Collector Pulsed (Icm) :

600 A

Pin Count :

3

Surface Mount :

No

Max Power Dissipation :

357 W

Switching Energy :

-

Voltage - Collector Emitter Breakdown (Max) :

3000 V

Manufacturer :

IXYS

Vce(on) (Max) @ Vge, Ic :

3.2V @ 15V, 55A

Reach Compliance Code :

Compliant

JESD-609 Code :

e1

Configuration :

Single

IGBT Type :

-

Terminal Position :

Single

Product Status :

Active

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate-Emitter Voltage-Max :

25 V

Pbfree Code :

yes

Terminal Form :

THROUGH-HOLE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Category :

IGBT Transistors

Power Dissipation-Max (Abs) :

290 W

Supplier Device Package :

ISOPLUS i4-PAC?

Max Operating Temperature :

150 °C

Tradename :

BIMOSFET

Case Connection :

Isolated

Package / Case :

i4-Pac?-5 (3 Leads)

Packaging :

Tube

Gate-Emitter Thr Voltage-Max :

5 V

Collector Emitter Voltage (VCEO) :

3 kV

Number of Elements :

1

Gate Charge :

335 nC

Power - Max :

357 W

Element Configuration :

Single

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Current - Collector (Ic) (Max) :

86 A

RoHS :

Details

Technology :

Si

Min Operating Temperature :

-55 °C

Package Shape :

RECTANGULAR

Reverse Recovery Time (trr) :

1.9 μs

Mounting Style :

Through Hole