IXBF55N300

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Input Type :

Standard

Number of Elements :

1

Operating Temperature :

-55°C ~ 150°C (TJ)

Subcategory :

IGBTs

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package :

Tube

Mounting Style :

Through Hole

Reverse Recovery Time (trr) :

1.9 μs

JESD-609 Code :

e1

Product Type :

IGBT Transistors

Technology :

Si

IGBT Type :

-

Collector Current-Max (IC) :

73 A

Number of Terminals :

3

Max Operating Temperature :

150 °C

Collector-Emitter Voltage-Max :

3000 V

Td (on/off) @ 25°C :

-

Test Condition :

-

Pbfree Code :

yes

Gate-Emitter Thr Voltage-Max :

5 V

Collector Emitter Saturation Voltage :

2.7 V

Power Dissipation-Max (Abs) :

290 W

Mounting Type :

Through Hole

Transistor Application :

POWER CONTROL

Configuration :

Single

Element Configuration :

Single

Power - Max :

357 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Pin Count :

3

Voltage - Collector Emitter Breakdown (Max) :

3000 V

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 150 C

Current - Collector (Ic) (Max) :

86 A

Minimum Operating Temperature :

- 55 C

Reach Compliance Code :

Compliant

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSIP-T3

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

3.2V @ 15V, 55A

Transistor Element Material :

SILICON

Package / Case :

i4-Pac?-5 (3 Leads)

Gate Charge :

335 nC

Product Category :

IGBT Transistors

Supplier Device Package :

ISOPLUS i4-PAC?

Current - Collector Pulsed (Icm) :

600 A

Min Operating Temperature :

-55 °C

Package Shape :

RECTANGULAR

Tradename :

BIMOSFET

Terminal Position :

Single

Max Power Dissipation :

357 W

Brand :

IXYS

Product Status :

Active

Series :

BIMOSFET?

Switching Energy :

-

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

3 kV

Case Connection :

Isolated

Gate-Emitter Voltage-Max :

25 V

RoHS :

Details