IXBF55N300

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Minimum Operating Temperature :

- 55 C

Collector Emitter Saturation Voltage :

2.7 V

Package :

Tube

Manufacturer :

IXYS

Brand :

IXYS

Qualification Status :

Not Qualified

Max Power Dissipation :

357 W

Pin Count :

3

Current - Collector Pulsed (Icm) :

600 A

Switching Energy :

-

Gate Charge :

335 nC

Number of Terminals :

3

Configuration :

Single

Package / Case :

i4-Pac?-5 (3 Leads)

Max Operating Temperature :

150 °C

Input Type :

Standard

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Series :

BIMOSFET?

Terminal Form :

THROUGH-HOLE

Gate-Emitter Voltage-Max :

25 V

Collector Emitter Voltage (VCEO) :

3 kV

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Element Configuration :

Single

Case Connection :

Isolated

Number of Elements :

1

IGBT Type :

-

Supplier Device Package :

ISOPLUS i4-PAC?

Current - Collector (Ic) (Max) :

86 A

Test Condition :

-

Power - Max :

357 W

Gate-Emitter Thr Voltage-Max :

5 V

Reach Compliance Code :

Compliant

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

3.2V @ 15V, 55A

Transistor Application :

POWER CONTROL

Min Operating Temperature :

-55 °C

Product Category :

IGBT Transistors

Pbfree Code :

yes

Reverse Recovery Time (trr) :

1.9 μs

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max (Abs) :

290 W

Td (on/off) @ 25°C :

-

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

3000 V

Tradename :

BIMOSFET

Subcategory :

IGBTs

Collector Current-Max (IC) :

73 A

Operating Temperature :

-55°C ~ 150°C (TJ)

Collector-Emitter Voltage-Max :

3000 V

RoHS :

Details

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Surface Mount :

No

Maximum Operating Temperature :

+ 150 C

Product Type :

IGBT Transistors

Package Shape :

RECTANGULAR

Technology :

Si

Terminal Position :

Single