IRLU9343PBF
- Mfr.Part #
- IRLU9343PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 55V 20A IPAK
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 2.3876mm
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Fall Time (Typ) :
- 9.5 ns
- Min Operating Temperature :
- -40°C
- Radiation Hardening :
- No
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- ECCN Code :
- EAR99
- Rise Time :
- 24ns
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 175°C
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- DRAIN
- Factory Lead Time :
- 11 Weeks
- Pulsed Drain Current-Max (IDM) :
- 60A
- Length :
- 6.7056mm
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 3.4A, 10V
- Number of Pins :
- 3
- Max Power Dissipation :
- 79W
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 50V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HEXFET®
- Power Dissipation :
- 79W
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Current Rating :
- -20A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -55V
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Drain to Source Voltage (Vdss) :
- 55V
- Turn-Off Delay Time :
- 21 ns
- Height :
- 6.22mm
- Mount :
- Through Hole
- Published :
- 2004
- Drain to Source Breakdown Voltage :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- P-Channel
- Turn On Delay Time :
- 9.5 ns
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- -20A
- Datasheets
- IRLU9343PBF

P-Channel Tube 105m Ω @ 3.4A, 10V 660pF @ 50V 47nC @ 10V 55V TO-251-3 Short Leads, IPak, TO-251AA
IRLU9343PBF Description
This Digital Audio HEXFET is designed for Class D audio amplifier applications. The MOSFET uses the latest technology to achieve a low on-resistance per silicon area. In addition, gate charge, body diode reverse recovery and internal gate resistance are optimized to improve the key performance factors of Class D audio amplifier, such as efficiency, THD and EMI. Other features of the MOSFET include an operating junction temperature of 175C and the ability to repeat avalanches. The combination of these features makes the MOSFET an efficient, rugged and reliable device for Class D audio amplifier applications.
IRLU9343PBF Features
Advanced Process Technology
Key Parameters Optimized for Class-D Audio
Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved
Efficiency
Low Qrr for Better THD and Lower EMI
175°C Operating Junction Temperature for
Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
Multiple Package Options
Lead-Free
IRLU9343PBF Applications
Class D audio amplifier applications
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