IRLU2703

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

Power Dissipation-Max :

45W Tc

Rds On (Max) @ Id, Vgs :

45m Ω @ 14A, 10V

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±16V

Avalanche Energy Rating (Eas) :

77 mJ

FET Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

96A

Peak Reflow Temperature (Cel) :

245

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Packaging :

Tube

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

23A Tc

JESD-609 Code :

e0

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

20A

Published :

2003

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.045Ohm

Terminal Position :

Single