IRLU024NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

55V

Width :

2.3876mm

ECCN Code :

EAR99

Radiation Hardening :

No

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Case Connection :

DRAIN

Fall Time (Typ) :

29 ns

Dual Supply Voltage :

55V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Avalanche Energy Rating (Eas) :

68 mJ

Factory Lead Time :

12 Weeks

Published :

2000

Rise Time :

74ns

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Series :

HEXFET®

Current Rating :

17A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

45W

Mount :

Through Hole

Number of Pins :

3

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Power Dissipation-Max :

45W Tc

Rds On (Max) @ Id, Vgs :

65m Ω @ 10A, 10V

FET Type :

N-Channel

Mounting Type :

Through Hole

Nominal Vgs :

2 V

Height :

6.22mm

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Pulsed Drain Current-Max (IDM) :

72A

Resistance :

65mOhm

Turn-Off Delay Time :

20 ns

Length :

6.7056mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

3

Turn On Delay Time :

7.1 ns

Element Configuration :

Single

Packaging :

Tube

JESD-609 Code :

e3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

17A

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

16V

Threshold Voltage :

2V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

55V

Lead Free :

Contains Lead, Lead Free