IRLU110
- Mfr.Part #
- IRLU110
- Manufacturer
- Vishay
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4.3A TO251AA
- Stock
- 4,673
- In Stock :
- 4,673
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 240
- Terminal Finish :
- TIN LEAD
- Turn On Delay Time :
- 9.3 ns
- Pbfree Code :
- No
- Current Rating :
- 4.8A
- Voltage - Rated DC :
- 100V
- JESD-609 Code :
- e0
- Fall Time (Typ) :
- 17 ns
- Packaging :
- Tube
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Rise Time :
- 47ns
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Pin Count :
- 3
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Continuous Drain Current (ID) :
- 4.3A
- Pulsed Drain Current-Max (IDM) :
- 17A
- Published :
- 2016
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±10V
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Tc
- Turn-Off Delay Time :
- 16 ns
- Radiation Hardening :
- No
- Factory Lead Time :
- 6 Weeks
- Lead Free :
- Contains Lead
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.54Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 6.1nC @ 5V
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 540m Ω @ 2.6A, 5V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRLU110
N-Channel Tube 540m Ω @ 2.6A, 5V ±10V 250pF @ 25V 6.1nC @ 5V TO-251-3 Short Leads, IPak, TO-251AA
IRLU110 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.A device's maximum input capacitance is 250pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 16 ns.Its maximum pulsed drain current is 17A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.3 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.This device uses no drive voltage (4V 5V) to reduce its overall power consumption.
IRLU110 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 4.3A
the turn-off delay time is 16 ns
based on its rated peak drain current 17A.
IRLU110 Applications
There are a lot of Vishay Siliconix
IRLU110 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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