IRLU110PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Rise Time :

47ns

Pbfree Code :

yes

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

540m Ω @ 2.6A, 5V

Number of Channels :

1

Gate to Source Voltage (Vgs) :

10V

Fall Time (Typ) :

17 ns

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Published :

2010

Number of Pins :

3

Transistor Element Material :

SILICON

Threshold Voltage :

2V

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 5V

Case Connection :

DRAIN

Power Dissipation :

2.5W

Number of Elements :

1

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Turn-Off Delay Time :

16 ns

Number of Terminations :

3

Turn On Delay Time :

9.3 ns

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

8 Weeks

Resistance :

540mOhm

Height :

6.22mm

ECCN Code :

EAR99

REACH SVHC :

Unknown

Drain to Source Voltage (Vdss) :

100V

Element Configuration :

Single

Power Dissipation-Max :

2.5W Ta 25W Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

Weight :

329.988449mg

Transistor Application :

SWITCHING

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs (Max) :

±10V

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

4.3A

Radiation Hardening :

No

Length :

6.73mm

Width :

2.38mm

Pin Count :

3