IRLU120NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

185m Ω @ 6A, 10V

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Length :

6.7056mm

Turn-Off Delay Time :

23 ns

Number of Pins :

3

Avalanche Energy Rating (Eas) :

85 mJ

Gate to Source Voltage (Vgs) :

16V

Mount :

Through Hole

Voltage - Rated DC :

100V

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

Power Dissipation-Max :

48W Tc

Current Rating :

10A

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Fall Time (Typ) :

22 ns

Height :

6.22mm

Threshold Voltage :

2V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

Rise Time :

35ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Continuous Drain Current (ID) :

10A

Lead Free :

Lead Free

Resistance :

185mOhm

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±16V

Width :

2.3876mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Turn On Delay Time :

4 ns

Element Configuration :

Single

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Drain to Source Breakdown Voltage :

100V

Published :

2004

Radiation Hardening :

No

Power Dissipation :

48W

Dual Supply Voltage :

100V

Transistor Element Material :

SILICON

Nominal Vgs :

2 V

Additional Feature :

AVALANCHE RATED