IRLU2703PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

20 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Number of Elements :

1

Vgs (Max) :

±16V

Resistance :

45mOhm

JESD-609 Code :

e3

Power Dissipation :

38W

Turn-Off Delay Time :

12 ns

Current - Continuous Drain (Id) @ 25°C :

23A Tc

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

96A

Additional Feature :

AVALANCHE RATED

Nominal Vgs :

1 V

Mount :

Through Hole

Threshold Voltage :

1V

Dual Supply Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Rise Time :

140ns

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Continuous Drain Current (ID) :

23A

Number of Terminations :

3

Voltage - Rated DC :

30V

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

RoHS Compliant

Turn On Delay Time :

8.5 ns

FET Type :

N-Channel

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

77 mJ

Terminal Position :

Single

Width :

2.3876mm

Transistor Application :

SWITCHING

Packaging :

Tube

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Factory Lead Time :

13 Weeks

Power Dissipation-Max :

45W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Pins :

3

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

45m Ω @ 14A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Length :

6.7056mm

Height :

6.22mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2003

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

23A

Case Connection :

DRAIN