IRLU024
- Mfr.Part #
- IRLU024
- Manufacturer
- Vishay
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 14A TO251AA
- Stock
- 29,665
- In Stock :
- 29,665
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Gate to Source Voltage (Vgs) :
- 10V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Mounting Type :
- Through Hole
- Drain to Source Resistance :
- 100MOhm
- Factory Lead Time :
- 6 Weeks
- Published :
- 2016
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Drain to Source Breakdown Voltage :
- 60V
- Input Capacitance :
- 870pF
- Vgs (Max) :
- ±10V
- Number of Pins :
- 3
- Fall Time (Typ) :
- 41 ns
- Continuous Drain Current (ID) :
- 14A
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 25V
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 100 mΩ
- Turn On Delay Time :
- 11 ns
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 8.4A, 5V
- Packaging :
- Tube
- Supplier Device Package :
- TO-251AA
- Element Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 23 ns
- Radiation Hardening :
- No
- Rise Time :
- 110ns
- Drain to Source Voltage (Vdss) :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 5V
- Power Dissipation :
- 2.5W
- Datasheets
- IRLU024
N-Channel Tube 100mOhm @ 8.4A, 5V ±10V 870pF @ 25V 18nC @ 5V 60V TO-251-3 Short Leads, IPak, TO-251AA
IRLU024 Overview
A device's maximal input capacitance is 870pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 100mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).
IRLU024 Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)
IRLU024 Applications
There are a lot of Vishay Siliconix
IRLU024 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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