IRLU9343PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Number of Terminations :

3

Turn-Off Delay Time :

21 ns

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

9.5 ns

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Height :

6.22mm

Factory Lead Time :

11 Weeks

FET Type :

P-Channel

Case Connection :

DRAIN

Fall Time (Typ) :

9.5 ns

Min Operating Temperature :

-40°C

Mounting Type :

Through Hole

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Rise Time :

24ns

Transistor Application :

AMPLIFIER

Pulsed Drain Current-Max (IDM) :

60A

ECCN Code :

EAR99

Packaging :

Tube

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Length :

6.7056mm

Voltage - Rated DC :

-55V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Published :

2004

Current Rating :

-20A

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Width :

2.3876mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Lead Free :

Lead Free

Max Operating Temperature :

175°C

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 50V

Continuous Drain Current (ID) :

-20A

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Max Power Dissipation :

79W

Number of Pins :

3

Drain to Source Voltage (Vdss) :

55V

Power Dissipation :

79W

Operating Mode :

ENHANCEMENT MODE