IRLU9343

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Operating Temperature :

-40°C~175°C TJ

Avalanche Energy Rating (Eas) :

120 mJ

Published :

2004

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 50V

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

245

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Qualification Status :

Not Qualified

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

20A

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

55V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

60A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Terminal Position :

Single

Number of Elements :

1

Drain-source On Resistance-Max :

0.105Ohm

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Vgs (Max) :

±20V

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

79W Tc

Surface Mount :

No

Terminal Finish :

TIN LEAD

JESD-609 Code :

e0

DS Breakdown Voltage-Min :

55V