IRLU8726PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

12 ns

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Published :

2008

Packaging :

Tube

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Turn-Off Delay Time :

15 ns

Rds On (Max) @ Id, Vgs :

5.8mOhm @ 25A, 10V

Power Dissipation-Max :

75W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 15V

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Supplier Device Package :

I-PAK

FET Type :

N-Channel

Max Operating Temperature :

175°C

Drain to Source Resistance :

8mOhm

Rise Time :

49ns

Length :

6.7056mm

Min Operating Temperature :

-55°C

Input Capacitance :

2.15nF

Width :

2.3876mm

Number of Pins :

3

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

16 ns

Current - Continuous Drain (Id) @ 25°C :

86A Tc

Threshold Voltage :

1.8V

Rds On Max :

5.8 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

1.8 V

Element Configuration :

Single

Mount :

Through Hole

Continuous Drain Current (ID) :

86A

RoHS Status :

RoHS Compliant

Recovery Time :

36 ns

Vgs(th) (Max) @ Id :

2.35V @ 50μA

REACH SVHC :

No SVHC

Height :

6.22mm

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

75W