IRLU8259PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

48W

Dual Supply Voltage :

25V

RoHS Status :

RoHS Compliant

Number of Pins :

3

Termination :

Through Hole

Drain to Source Breakdown Voltage :

25V

Fall Time (Typ) :

8.9 ns

Recovery Time :

26 ns

Nominal Vgs :

1.9 V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Radiation Hardening :

No

Series :

HEXFET®

Width :

2.3876mm

Drain to Source Resistance :

12.9mOhm

Rds On (Max) @ Id, Vgs :

8.7mOhm @ 21A, 10V

Published :

2008

Length :

6.7056mm

Vgs(th) (Max) @ Id :

2.35V @ 25µA

REACH SVHC :

No SVHC

Rise Time :

38ns

Height :

6.22mm

FET Type :

N-Channel

Power Dissipation-Max :

48W Tc

Min Operating Temperature :

-55°C

Vgs (Max) :

±20V

Max Operating Temperature :

175°C

Supplier Device Package :

I-PAK

Drain to Source Voltage (Vdss) :

25V

Packaging :

Tube

Input Capacitance :

900pF

Continuous Drain Current (ID) :

57A

Turn On Delay Time :

8.4 ns

Rds On Max :

8.7 mΩ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 13V

Turn-Off Delay Time :

9.1 ns

Mount :

Through Hole