IRLU8256PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

25V

Drain to Source Breakdown Voltage :

25V

Rds On (Max) @ Id, Vgs :

5.7mOhm @ 25A, 10V

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

81A Tc

Turn On Delay Time :

9.7 ns

Continuous Drain Current (ID) :

81A

Threshold Voltage :

1.8V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

29 ns

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 13V

Packaging :

Tube

Rise Time :

46ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Height :

6.22mm

Termination :

Through Hole

Nominal Vgs :

1.8 V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Resistance :

8.5mOhm

Mount :

Through Hole

Supplier Device Package :

I-PAK

Number of Pins :

3

Turn-Off Delay Time :

12 ns

Input Capacitance :

1.47nF

Power Dissipation-Max :

63W Tc

Length :

6.7056mm

Rds On Max :

5.7 mΩ

Radiation Hardening :

No

FET Type :

N-Channel

Dual Supply Voltage :

25V

Power Dissipation :

63W

Fall Time (Typ) :

8.5 ns

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

175°C

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-55°C

Width :

2.3876mm

Published :

2008