IRLU8203PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

110A

Drain to Source Resistance :

9mOhm

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2430pF @ 15V

Packaging :

Tube

Power Dissipation :

140W

Turn-Off Delay Time :

30 ns

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

69 ns

Element Configuration :

Single

Rise Time :

99ns

Rds On (Max) @ Id, Vgs :

6.8mOhm @ 15A, 10V

Resistance :

6.8mOhm

Power Dissipation-Max :

140W Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Nominal Vgs :

3 V

Threshold Voltage :

3V

Drain to Source Breakdown Voltage :

30V

Published :

2002

Input Capacitance :

2.43nF

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

4

Max Operating Temperature :

175°C

Drain to Source Voltage (Vdss) :

30V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Supplier Device Package :

I-PAK

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

6.8 mΩ

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

30V

Series :

HEXFET®

Current Rating :

110A

Voltage - Rated DC :

30V