IRLU8113PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

7.4mOhm

Number of Pins :

3

Supplier Device Package :

I-PAK

Width :

2.3mm

Published :

2004

Nominal Vgs :

2.25 V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Rds On Max :

6 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

2920pF @ 15V

Turn-Off Delay Time :

15 ns

Max Operating Temperature :

175°C

Power Dissipation-Max :

89W Tc

Voltage - Rated DC :

30V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

30V

Recovery Time :

49 ns

Mount :

Through Hole

Vgs (Max) :

±20V

Length :

6.6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

89W

Current Rating :

94A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Series :

HEXFET®

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

6mOhm @ 15A, 10V

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

30V

Height :

6.1mm

Packaging :

Tube

Lead Free :

Lead Free

Turn On Delay Time :

9.2 ns

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

2.25V

Continuous Drain Current (ID) :

94A

Input Capacitance :

2.92nF

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

94A Tc