IRLU7821PBF
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- Mfr.Part #
- IRLU7821PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 65A I-PAK
- Stock
- 5,468
- In Stock ：
- 5,468
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Threshold Voltage :
- 1V
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- I-PAK
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Drain to Source Voltage (Vdss) :
- 30V
- Termination :
- Through Hole
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Rds On Max :
- 10 MΩ
- Max Operating Temperature :
- 175°C
- Nominal Vgs :
- 1 V
- Rds On (Max) @ Id, Vgs :
- 10mOhm @ 15A, 10V
- Drain to Source Breakdown Voltage :
- 30V
- Turn On Delay Time :
- 11 ns
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 15V
- Rise Time :
- 4.2ns
- Turn-Off Delay Time :
- 10 ns
- Input Capacitance :
- 1.03nF
- Power Dissipation-Max :
- 75W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- 30V
- Voltage - Rated DC :
- 30V
- Continuous Drain Current (ID) :
- 65A
- Current - Continuous Drain (Id) @ 25°C :
- 65A Tc
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Drain to Source Resistance :
- 12.5mOhm
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Current Rating :
- 65A
- Published :
- 2006
- Power Dissipation :
- 75W
- Series :
- HEXFET®
- Datasheets
- IRLU7821PBF
N-Channel Tube 10mOhm @ 15A, 10V ±20V 1030pF @ 15V 14nC @ 4.5V 30V TO-251-3 Short Leads, IPak, TO-251AA
IRLU7821PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1030pF @ 15V.This device conducts a continuous drain current (ID) of 65A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 10 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 12.5mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRLU7821PBF Features
a continuous drain current (ID) of 65A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 12.5mOhm
a threshold voltage of 1V
a 30V drain to source voltage (Vdss)
IRLU7821PBF Applications
There are a lot of Infineon Technologies
IRLU7821PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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