IRLU7821

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

30A

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

MATTE TIN OVER NICKEL

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 15V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.01Ohm

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

75W Tc

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10m Ω @ 15A, 10V

Packaging :

Tube

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Series :

HEXFET®

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

230 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2006

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

260A

Number of Terminations :

3

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Surface Mount :

No

Qualification Status :

Not Qualified

Number of Elements :

1

FET Type :

N-Channel