IRLU7807ZPBF
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- Mfr.Part #
- IRLU7807ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 43A I-PAK
- Stock
- 20,536
- In Stock ：
- 20,536
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 43A
- Series :
- HEXFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 780pF @ 15V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Rise Time :
- 28ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2.25V @ 250μA
- Fall Time (Typ) :
- 3.5 ns
- Drain to Source Breakdown Voltage :
- 30V
- Nominal Vgs :
- 1.8 V
- Drain to Source Resistance :
- 18.2mOhm
- Max Operating Temperature :
- 175°C
- Length :
- 6.6mm
- Published :
- 2003
- Turn-Off Delay Time :
- 9.8 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Height :
- 6.1mm
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 43A
- Supplier Device Package :
- I-PAK
- Turn On Delay Time :
- 7.1 ns
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- Threshold Voltage :
- 1.8V
- Power Dissipation :
- 40W
- Recovery Time :
- 35 ns
- Rds On (Max) @ Id, Vgs :
- 13.8mOhm @ 15A, 10V
- Power Dissipation-Max :
- 40W Tc
- Mount :
- Through Hole
- Rds On Max :
- 13.8 mΩ
- Input Capacitance :
- 780pF
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Pins :
- 3
- Width :
- 2.3mm
- Voltage - Rated DC :
- 30V
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRLU7807ZPBF
N-Channel Tube 13.8mOhm @ 15A, 10V ±20V 780pF @ 15V 11nC @ 4.5V 30V TO-251-3 Short Leads, IPak, TO-251AA
IRLU7807ZPBF Overview
A device's maximum input capacitance is 780pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 43A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 9.8 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 18.2mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.1 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.8V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRLU7807ZPBF Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 9.8 ns
single MOSFETs transistor is 18.2mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRLU7807ZPBF Applications
There are a lot of Infineon Technologies
IRLU7807ZPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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